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Focused Ion Beam-Induced Carbon Deposition

Published online by Cambridge University Press:  25 February 2011

L. R. Harriott  and
M. J. Vasile
L. R. Harriott
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
M. J. Vasile
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
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Abstract

A process for repair of micron and submicron sized transparent defects on photomasks is described. Opaque films are deposited at the intersection of the flux of organic monomers from a gas jet and a 20 keV Ga ion beam. Focused ion beam-induced deposition differs from other ion-induced, electron beam and laser processes due to the very high ion current density and the sputtering of the material as it is being deposited. We have explored the deposition-sputtering rate competition for several precursor materials as a function of monomer flux and ion beam dose rate. Our results suggest a model for deposition which requires polymerization of the precursor through carbon-carbon double bonds to favor deposition over sputtering by creating high molecular weight material at the target.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 543
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

[1] Kaufmann, H.C., Thompson, W.B., and Dunn, G.J., Proc. SPIE,Int. Soc. Opt. Eng. 632, 60 (1986).Google Scholar
[2] Wagner, A., Nucl. Instrum. Methods 218, 355 (1983).CrossRefGoogle Scholar
[3] Harriott, L.R., Proc. SPIE, Int. Soc. Opt. Eng. 773, 190 (1987).Google Scholar
[4] Yamamamoto, M., Sato, M., Kyogoku, H., Aita, K., Nakagawa, Y., Yasaka, A., Takasawa, R., and Hattori, O., Proc. SPIE, Int. Soc. Opt. Eng. 632, 97 (1986).Google Scholar
[5] Economou, N.P., Shaver, D.C., and Ward, B., Proc. SPIE, Int. Soc. Opt. Eng. 773, 201 (1987).Google Scholar
[6] Saitoh, K., Onoda, H., Morimoto, H., Katayama, T., watakabe, Y., and Kato, T., J. Vac. Sci. Technol. B 6(3), 1032 (1988).Google Scholar
[7] Harriott, L.R. and Vasile, M.J., J. Vac. Sci. Technol. B 6(3), 1035 (1988).Google Scholar