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Focused Ion Beam-Induced Carbon Deposition

Published online by Cambridge University Press:  25 February 2011

L. R. Harriott  and
M. J. Vasile
L. R. Harriott
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
M. J. Vasile
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
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Abstract

A process for repair of micron and submicron sized transparent defects on photomasks is described. Opaque films are deposited at the intersection of the flux of organic monomers from a gas jet and a 20 keV Ga ion beam. Focused ion beam-induced deposition differs from other ion-induced, electron beam and laser processes due to the very high ion current density and the sputtering of the material as it is being deposited. We have explored the deposition-sputtering rate competition for several precursor materials as a function of monomer flux and ion beam dose rate. Our results suggest a model for deposition which requires polymerization of the precursor through carbon-carbon double bonds to favor deposition over sputtering by creating high molecular weight material at the target.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 543
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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