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Focused Ion Beam Sims for Micromachining Applications

Published online by Cambridge University Press:  26 February 2011

L. R. Harriott  and
M. J. Vasile
L. R. Harriott
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. J. Vasile
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

A secondary ion mass spectrometry (SIMS) system has been incorporated into the AT&T-BL second generation focused ion beam (FIB) micromachining system. The primary applications are end-point detection and topographical element mapping. End-point detection of Cr micromachining on photomasks was done with raster sizes ranging from 10 μm x 10 μm to 3 μm x 3 μm. SIMS end-points, total ions images, and transmitted light measurements show that the ion-milling can be controlled to stop prior to or after the Cr/glass interface. Mass selected secondary ion images have been obtained for high yield ions such as52Cr+ and27 A1+ on raster fields of 25 μm in time intervals ranging from 20 to 100 sec. Al+ SIMS images of 1 μm lines and spaces from a VLSI test pattern have been obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 483
Copyright
Copyright © Materials Research Society 1998

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References

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