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Flexible organic field-effect transistors fabricated by the electrode-peeling transfer

Published online by Cambridge University Press:  15 February 2011

Takeshi Yasuda ,
Katsuhiko Fujita  and
Tetsuo Tsutsui
Takeshi Yasuda
Affiliation:
Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Katsuhiko Fujita
Affiliation:
Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Tetsuo Tsutsui
Affiliation:
Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Abstract

We report a simple and mild fabrication of flexible organic field-effect transistors (OFETs) by an electrode-peeling transfer method. Firstly, fine patterns of source-drain metal electrodes were formed on a solid substrate, where a micro-patterning process such as photolithography is applicable. An organic dielectric layer (poly-chloro-p-xylylene) was deposited by a chemical vapor deposition. Then patterned gate electrode was deposited using a shadow mask. On the top surface of the gate electrode, another adhesive flexible substrate was fixed and the stack of the flexible substrate/gate electrode /dielectric layer /source-drain electrode was peeled away from the solid substrate. The peeling-transfer was completed with a help of a self-assembled monolayer of n-decyl mercaptan as a connecting buffer layer between the gold electrodes and the dielectric layer. Then an organic semiconductor material was deposited on the fresh peeled-off surface on the flexible substrate. When pentacene was used as the semiconductor material, the OFETs exhibited a hole mobility of 0.1 cm2/Vs and a current on/off ratio of 105.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H3.9
Copyright
Copyright © Materials Research Society 2003

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