Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T17:33:22.506Z Has data issue: false hasContentIssue false
  • English
  • Français

The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor

Published online by Cambridge University Press:  11 February 2011

Sarah Estrada ,
Andreas Stonas ,
Andrew Huntington ,
Huili Xing ,
Larry Coldren ,
Steven DenBaars ,
Umesh Mishra  and
Evelyn Hu
Sarah Estrada
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California 93106–5050
Andreas Stonas
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California 93106–5050
Andrew Huntington
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California 93106–5050
Huili Xing
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California 93106–5050
Larry Coldren
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California 93106–5050
Steven DenBaars
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California 93106–5050
Umesh Mishra
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California 93106–5050
Evelyn Hu
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California 93106–5050
Get access

Abstract

We describe the use of wafer fusion to form a heterojunction bipolar transistor (HBT), with an AlGaAs-GaAs emitter-base fused to a GaN collector. In this way, we hope to make use of both the high breakdown voltage of the GaN and the high mobility of the technologically more mature GaAs-based materials. This paper reports the first dc device characteristics of a wafer-fused transistor, and demonstrates the potential of wafer fusion for forming electronically active, lattice-mismatched heterojunctions. Devices utilized a thick base (0.15um) and exhibited limited common-emitter current gain (0.2–0.5) at an output current density of ∼100A/cm2. Devices were operated to VCE greater than 20V, with a low VCE offset (1V). Improvements in both device structure and wafer fusion conditions should provide further improvements in HBT performance. The HBT was wafer-fused at 750°C for one hour. Current-voltage characteristics of wafer-fused p-GaAs/n-GaN diodes suggest that the fusion temperature could be reduced to 500°C. Such a reduction in process temperature should mitigate detrimental diffusion effects in future HBTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L12.10
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Xing, H., Keller, S., Wu, Y.-F., McCarthy, L., Smorchkova, I.P., Buttari, D., Coffie, R., Green, D.S., Parish, G., Heikman, S., Shen, L., Zhang, N., Xu, J.J., Keller, B.P., DenBaars, S.P., and Mishra, U.K., Journal of Physics: Condensed Matter, 13 (32), 7139–57 (2001).Google Scholar
2 Chiu, S.-Y., Anwar, A.F.M., and Wu, S., Mater. Res. Soc. GaN and Related Alloys Symposium, G6.7/6, 1028 (1999).Google Scholar
3 Torvik, J.T., Leksono, M., Pankove, J.I., and Van Broeck, B., Mater. Res. Soc. Internet Journal of Nitride Semiconductor Research, vol. 4S1, (1999).Google Scholar
4 Yoshida, S. and Suzuki, J., Japanese Journal of Appl. Phys. 38 (8A), L851–3 (1999).Google Scholar
5 Han, J., Baca, A.G., Shul, R.J., Willison, C.G., Zhang, L., Ren, F., Zhang, A.P., Dang, G.T., Donovan, S.M., Cao, X.A., Cho, H., Jung, K.B., Abernathy, C.R., Pearton, S.J., and Wilson, R.G., Appl. Phys. Lett., 743 (18), 2702–4 (1999).Google Scholar
6 Zhang, Y., Cai, C., and Ruden, P., J. Appl. Phys. 88, 1067–72 (2000).Google Scholar
7 Jasinski, J., Liliental-Weber, Z., Estrada, S., and Hu, E., Appl. Phys. Lett., 81 (17), 3152–4 (2002).Google Scholar
8 Piprek, J., Black, A., Abraham, P., Hu, E.L., and Bowers, J.E., Conference on Lasers and Electro-Optics Technical Digest (IEEE Cat. No.99CH37013), 458–9 (1999).Google Scholar
9 Song, D.S., Hwang, J.K., Kim, C.K., Han, I.Y., Jang, D.H., and Lee, Y.H., IEEE Photonics Technology Lett., 12 (8), 954–6 (2000).Google Scholar
10 Lo, Y.-H., Kang, Y., Mages, P., Yu, P., Baek, J.-H., Zhou, Y., Zhu, Z.H., International Conference on Indium Phosphide and Related Materials Proceedings (Cat. No.00CH37107), p. 497 (2000).Google Scholar
11 Hwang, J.K., Ryu, H.Y., Song, D.S., Han, I.Y., Park, H.K., Jang, D.H., and Lee, Y.H., IEEE Photonics Technology Lett. 12 (10), 1295–7 (2000).Google Scholar