Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T15:51:27.919Z Has data issue: false hasContentIssue false

First Demonstration of a Periodically Loaded Line Phase Shifter Using BST Capacitors

Published online by Cambridge University Press:  10 February 2011

Amit S. Nagra
Affiliation:
ECE Department, University of California, Santa Barbara, CA 93106
Troy R. Taylor
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
Padmini Periaswamy
Affiliation:
ECE Department, University of California, Santa Barbara, CA 93106
James Speck
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
Robert A. York
Affiliation:
ECE Department, University of California, Santa Barbara, CA 93106
Get access

Abstract

Periodically loaded line phase shifter circuits using voltage tunable BaSrTiO3 (BST) parallel plate capacitors have been demonstrated at X-band. The first such phase shifter circuit was capable of 100° of phase shift with an insertion loss of 7.6 dB at 10 GHz. Subsequently, the monolithic fabrication procedure was refined resulting in an improved phase shifter circuit with 200° of phase shift and an insertion loss of 6.2 dB at 10 GHz. In addition to promising loss performance (32°/dB) at 10 GHz, the circuits reported here have several desirable features such as moderate control voltages (20 V), room temperature operation, and compatibility with monolithic fabrication techniques.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Varadan, Vijay K., Jose, K.A., Varadan, Vasundara V., Hughes, R., and Kelly, James F., “A Novel Microwave Planar Phase Shifter,” Microwave Journal, pp. 244–54, April 1995.Google Scholar
2. Flaviis, Franco De, Alexopoulos, N. G. and Stafsudd, Oscar M., “Planar Microwave Integrated Phase Shifter Design with High Purity Ferroelectric Material,” IEEE Transactions on Microwave Theory and Techniques, vol. 45, No. 6, pp. 963–9, June 1997.10.1109/22.588610Google Scholar
3. Keuls, F. W. Van, Romanovsky, R. R., Bohman, D.Y., Winters, M. D., Miranda, F. A., Mueller, C. H., Treece, R. E., Rivkin, T. V., and Galt, D., “(YBa2Cu3O7-δ, Au)/SrTiO3/LaAlO3 Thin Film Conductor/Ferroelectric Coupled Microstripline Phase Shifters for Phased Array Applications,” Applied Physics Letters, vol. 71 (21), pp. 3075–7, 24 November 1997.10.1063/1.120251Google Scholar
4. Keuls, F. W. Van, Romanovsky, R. R., Varaljay, N. D., Miranda, F. A., Canedy, C. L., Aggarwal, S., Venkatesan, T., and Ramesh, R., “A Ku-Band Gold/BaxSr1−xTiO3/LaAlO3 Conductor/Thin-Film Ferroelectric Microstrip Line Phase Shifter for Room Temperature Communications Applications,” Microwave and Optical Technology Letters, vol. 20, No. 1, pp. 53–6, Wiley, Jan. 1999.10.1002/(SICI)1098-2760(19990105)20:1<53::AID-MOP15>3.0.CO;2-L3.0.CO;2-L>Google Scholar
5. Nagra, Amit S. and York, Robert A., “Distributed Analog Phase Shifters with Low Insertion Loss,” IEEE Transactions on Microwave Theory and Techniques, vol. 47, No. 9, pp.17051711, Sept. 1999.10.1109/22.788612Google Scholar
6. Wu, Y., Gamble, H. S., Armstrong, B. M., Fusco, V. F., and Stewart, J. A. Carson, “SiO2 interface layer effects on microwave loss of high-resistivity cpw line,” IEEE Microwave and Guided Wave Letters, vol. 9, No. 1, pp.1012, Jan. 1999.Google Scholar