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Films Grown on Vicinal GaAs(111) Substrates By Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

K. Yang  and
L. J. Schowalter
K. Yang
Affiliation:
Center for Integrated Electronics and Department of Physics, Rensselaer Polytechnic Institute, Troy, NY 12180
L. J. Schowalter
Affiliation:
Center for Integrated Electronics and Department of Physics, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

The faceted surface morphology of films grown on on-axis GaAs(111) substrates in the reconstruction regime is studied with an atomic force microscope. It reveals that facets are vicinal surfaces. Surface morphologies of films grown on substrates tilted toward different directions have been compared. An explanation is given for all observed surface morphologies. Smooth films can only be obtained on substrates tilted toward [211] in the surface reconstruction regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 151
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Smith, D. L., Solid State Commun. 57, 919 (1986); C. Mailoit and D. L. Smith, Phys. Rev. B 35, 1242 (1987).Google Scholar
2. Yang, K. and Schowalter, L. J., Appl. Phys. Lett. 60, 1851 (1992).Google Scholar
3. Chen, P., Rajkumar, K. C., and Madhukar, A., Appl. Phys. Lett. 58, 1771 (1990).Google Scholar
4. Yang, K., Schowalter, L. J., Laurich, B. K., and Smith, D. L., Mat. Res. Soc. Symp. Proceeding, Vol. 240, Advanced III-V Compound Semiconductor Growth, Processing, and Devices. Fall Meeting, 1991.Google Scholar
5. Biegelsen, D. K., Bringans, R. D., Northrup, J. E., and Swartz, L.-E., Phys. Rev. Lett. 65, 452 (1990).Google Scholar
6. Hayakawa, T., Nagai, M., Morishima, M., Horie, H., and Nagai, Matsumoto, Appl. Phys. Lett. 59, 2287 (1991).Google Scholar
7. Chin, A., Martin, P., Ho, P., Ballingall, J.. Yu, T., and Mazuroski, J., Appl. Phys. Lett. 59, 1899 (1991).Google Scholar
8. Tsutsui, K., Mizukami, H., Ishiyama, O., Nakamura, S., and Furukawa, S., Jpn. J. Appl. Phys. 29, 468 (1990).Google Scholar