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Field-effect Transistors of Tetracene Single Crystal on top of a Flexible Substrate

Published online by Cambridge University Press:  01 February 2011

Tae-Heon Kim ,
Joon Ho Lee ,
Jin heon Kim  and
Chang Seoul
Tae-Heon Kim
Affiliation:
[email protected] UniversityDepartment of Advanced Fiber Engineering, Division of Nanosystems Engineering253, Yong-hyun Dong, Nam-GuIncheon N/A 402-751Korea, Republic of
Joon Ho Lee
Affiliation:
[email protected], Inha University, Department of Advanced Fiber Engineering, Division of Nanosystems Engineering, 253 , Yong-hyun Dong, Nam-Gu, Incheon, N/A, 402-751, Korea, Republic of
Jin heon Kim
Affiliation:
[email protected], Inha University, Department of Advanced Fiber Engineering, Division of Nanosystems Engineering, 253, Yong-hyun Dong, Nam-Gu, Incheon, N/A, 402-751, Korea, Republic of
Chang Seoul
Affiliation:
[email protected], Inha University, Department of Advanced Fiber Engineering, Division of Nanosystems Engineering, 253, Yong-hyun Dong, Nam-Gu, Incheon, N/A, 402-751, Korea, Republic of
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Abstract

Tetracene single crystals were prepared by the vapor transport method. The polyimide films were used for both substrate and gate dielectric layer. The single-crystal FETs should perform better than thin film transistors. Very thin crystals (~1 μm) were adhered to the substrate by due to electrostatic forces. The mobility of tetracene single-crystal field-effect transistors reaches the room-temperature value of 5×10-4 cm2/Vs.

Keywords

electrical propertiesadhesiondielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 920: Symposium S – Smart Nanotextiles , 2006 , 0920-S02-04
Copyright
Copyright © Materials Research Society 2006

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