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Field Emission from Carbon Films Deposited by VHF CVD on Different Substrates

Published online by Cambridge University Press:  10 February 2011

A.I. Kosarev
Affiliation:
A.F.Ioffe Phys-Techn. Inst., S.-Petersburg, 194021RUSSIA
A.S. Abramov
Affiliation:
A.F.Ioffe Phys-Techn. Inst., S.-Petersburg, 194021RUSSIA
A.J. Vinogradov
Affiliation:
A.F.Ioffe Phys-Techn. Inst., S.-Petersburg, 194021RUSSIA
M.V. Shutov
Affiliation:
A.F.Ioffe Phys-Techn. Inst., S.-Petersburg, 194021RUSSIA
T.E. Felter
Affiliation:
Sandia National Laboratories, present address: Lawrence Livermore National Laboratory, CA 94550USA
A.N. Andronov
Affiliation:
Technical University, S.-Petersburg, 194251, RUSSIA
S.V. Robozerov
Affiliation:
A.F.Ioffe Phys-Techn. Inst., S.-Petersburg, 194021RUSSIA
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Abstract

As previously demonstrated, non-diamond carbon (NDC) films deposited at low temperatures 200-300 °C on silicon tips reduced the threshold of field emission. In this paper we will present the results of the study of field emission from flat NDC films prepared by VHF CVD. Emission measurements were performed in a diode configuration at approximately 10−10 Torr. NDC films were deposited on ceramic and on c-Si substrates sputter coated with layers of Ti, Cu, Ni and Pt. The back contact material influences the emission characteristics but not as a direct correlation to work function. A model of field emission from metal-NDC film structures will be discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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