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Field Emission and Band Bending Considerations From High-Quality NEA Diamond

Published online by Cambridge University Press:  15 February 2011

C. Bandis ,
B. B. Pate ,
W. Phillips ,
M. A. Plano ,
M. D. Moyer  and
M. A. Moreno
C. Bandis
Affiliation:
Department of Physics, Washington State University, Pullman, WA 99164–2814
B. B. Pate
Affiliation:
Department of Physics, Washington State University, Pullman, WA 99164–2814
W. Phillips
Affiliation:
Crystallume, 3506 Basset Street, Santa Clara, CA 94054
M. A. Plano
Affiliation:
Crystallume, 3506 Basset Street, Santa Clara, CA 94054
M. D. Moyer
Affiliation:
Crystallume, 3506 Basset Street, Santa Clara, CA 94054
M. A. Moreno
Affiliation:
Crystallume, 3506 Basset Street, Santa Clara, CA 94054
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Abstract

The near band gap photoelectric emission and field emission properties of diamond are investigated. Our results find three characteristic photoelectric yield spectra which have been observed from both polycrystalline CVD diamond films and single crystal diamond. The categories correspond to differences in bulk doping/surface preparation and illustrate the importance of band bending at the surface. Field emission experiments also find that the same three categories have distinct field emission properties. Our field emission observations are discussed in terms of electron transport properties from the bulk to the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 771
Copyright
Copyright © Materials Research Society 1996

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