Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-02-10T07:39:55.208Z Has data issue: false hasContentIssue false
  • English
  • Français

Fibxtem— Focussed Ion Beam Milling for TEM Sample Preparation

Published online by Cambridge University Press:  21 February 2011

David P. Basile ,
Ron Boylan ,
Brian Baker ,
Kathy Hayes  and
David Soza
David P. Basile
Affiliation:
Materials Technology and Failure Analysis Laboratory, Intel Corporation, Hillsboro, Oregon 97124.
Ron Boylan
Affiliation:
Materials Technology and Failure Analysis Laboratory, Intel Corporation, Hillsboro, Oregon 97124.
Brian Baker
Affiliation:
Materials Technology and Failure Analysis Laboratory, Intel Corporation, Hillsboro, Oregon 97124.
Kathy Hayes
Affiliation:
Materials Technology and Failure Analysis Laboratory, Intel Corporation, Hillsboro, Oregon 97124.
David Soza
Affiliation:
Materials Technology and Failure Analysis Laboratory, Intel Corporation, Hillsboro, Oregon 97124.
Get access

Abstract

In the semiconductor industry, shrinking geometries and increasing process complexity have greatly increased the demand for TEM analysis of specific submicron regions. Until recently, samples of this nature have been difficult if not impossible to prepare. We have combined cross-sectional TEM sample preparation (XTEM) and the precise material sputtering of focussed ion beam milling (FIB) to thin samples to electron transparency. We call this sample preparation technique FIBXTEM.

Three advantages of this technique are: 1) The area of interest can be analyzed in the scanning electron microscope before final thinning; 2) Any specific defect area becomes a candidate for TEM analysis, including failed sub-micron structures; and 3) Samples are generally artifact-free and of uniform thickness.

Key elements of the FIBXTEM technique include precision planar polishing, unique holders for mounting and transferring samples between systems, and the FIB-induced deposition of a sacrificial protective layer over the area of interest during ion thinning.

This technique extends the use of TEM analysis into new areas of semiconductor process development and failure analysis. Recent applications for materials problem solving and failure analysis are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 254: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials III , 1991 , 23
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Anderson, R., in Proceedings of the 49th Annual Meeting of the Electron Microscopy Society of America, edited by G.W. Bailey and E.L. Hall (San Francisco Press, Inc., California, 1991), pp. 828–829.CrossRefGoogle Scholar
2. Kirk, E.C.G., Williams, D.A., and Ahmed, H.. in Proceedings of the 6th Microscopy of Semiconducting Materials Conf., Inst. Phys. Conf. Ser. No. 100: Section 7, 501 (1986).Google Scholar
3. Young, R.J.. Kirk, E.C.G., Williams, D.A., and Ahmed, H., in Specimen Preparation for Transmission Electron Microscopy of Materials-II, edited by Anderson, R. (Mater. Res. Soc. Proc. 199. San Francisco, California, 1990). pp. 205–216.Google Scholar
4. Park, K.-H., in Specimen Preparation for Transmission Electron Microscopy of Materials-II, edited by Anderson, R. (Mater. Res. Soc. Proc. 199, San Francisco, California, 1990). pp. 271–280.Google Scholar
5. Nikawa, K., J. Vac. Sci. Tech. B 9(5). 2566–2577(1991).CrossRefGoogle Scholar
6. Morris, S., Tatti, S., Black, E., Dickson, N., Mendez, H., Schwiesow, B., and Pyle, R., in Proceedings of the 17th International Symposium for Testing & Failure Analysis, Los Angeles, California, 1991, pp. 417–427.Google Scholar
7. Kirch, S.J., Anderson, R., and Klepeis, S.J., in Proceedings of the 49th Annual Meeting of the Electron Microscopy Society of America, edited by G.W. Bailey and E.L. Hall (San Francisco Press, Inc., California, 1991), pp.1108–1109.CrossRefGoogle Scholar
8. Benedict, J.P.. Klepeis, S.J., Vandygrift, W.G., and Anderson, R., EMSA Bulletin, 19 (2). 74–80 (1989).Google Scholar
9. Klepeis, S.J.. Benedict, J.P., and Anderson, R.M., in Specimen Preparation for Transmission Electron Microscopy of Materials-I, edited by Anderson, R. (Mater. Res. Soc. Proc. 115. Boston, MA, 1987)pp. 179–184.Google Scholar
10. Ward, J.W.. Utlaut, M.W., and Kubena, R.L., J. Vac. Sci. Tech. B 5(1). 169–174 (1987).CrossRefGoogle Scholar
11. Kubena, R.L., Stratton, F.P., Ward, J.W., Atkinson, G.M., and Joyce, R.J., J. Vac. Sci. Tech. B 7(6). 1798–1801(1989).CrossRefGoogle Scholar
12. Blauner, P.G., Ro, J.-S., Butt, Y., and Melngailis, J., J. Vac. Sci. Tech. B 7(4), 609–617(1989).CrossRefGoogle Scholar
13. Blauner, P.G., Butt, Y., Ro, J.-S., Thompson, C.V., and Melngailis, J., J. Vac. Sci. Tech. B 7(6). 1816–1818(1989).Google Scholar
14. Dubner, A.D. and Wagner, A.. J. Vac. Sci. Tech. B 7(6).1950–1953(1989).CrossRefGoogle Scholar