Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T08:56:28.729Z Has data issue: false hasContentIssue false
  • English
  • Français

Ferroelectric La-Sr-Co-O / Pb-Zr-TI-O / La-Sr-Co-O Heterostructures on Silicon: Reliability Testing

Published online by Cambridge University Press:  21 February 2011

R. Ramesh ,
T. Sands ,
V. G. Keramidas  and
D.K. Fork
R. Ramesh
Affiliation:
Bellcore, Red Bank, NJ 07701
T. Sands
Affiliation:
Bellcore, Red Bank, NJ 07701
V. G. Keramidas
Affiliation:
Bellcore, Red Bank, NJ 07701
D.K. Fork
Affiliation:
Xerox Palo Alto Research Center Palo Alto, CA 94304
Get access

Abstract

We report results of pulsed electrical testing of ferroelectric Pb0.9La0.1Zr0.2Ti0.8O3 thin film capacitors with symmetrical La-Sr-Co-O top and bottom electrodes at room temperature and at 100°C. They have been grown on [001] Si with a Yttria stabilized zirconia (YSZ) buffer layer. A layered perovskite “template” layer (200-300Å thick), grown between the YSZ buffer layer and the bottom La-Sr-Co-O electrode, is critical for obtaining the required orientation of the subsequent layers. When compared to the capacitors grown with Y-Ba-Cu-O (YBCO) top and bottom electrodes, these structures possess two advantages : (1) the growth temperatures are lower by 60-150°C; (ii) the capacitors show a large remnant polarization, δP, ( δP = switched polarization -non-switched polarization), 25-30 μC/cm2, for an applied voltage of only 2V (applied field of 70kV/cm). The fatigue, retention and aging characteristics of these new structures are excellent at both room temperature and at 100°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 195
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See for example, Proc. of Materials Research Society Fall Meeting Symposium on Ferroelectric Thin Films 11. Eds. Kingon, A., Myers, E.R. and Tuttle, B., Materials Research Society, Pittsburgh, PA, Dec., 1991; Proc. of Third Int. Symp. on Integrated Ferroelectrics, Ed. CA. Paz de Araujo, University of Colorado, Colorado Springs, CO., April 1991; Proc. of Fourth Int. Symp. on Integrated Ferroelectrics, Monterey, CA, March 1992.Google Scholar
2. Scott, J.F. and Araujo, C.A. Paz de, Science, 246, 1400(1989); M.Sayer and K. Sreenivas Science 247, 1056(1990); G.H. Haertling Jl. of Vacuum Science and Technology, 9, 414(1991).Google Scholar
3. Sinharoy, S. Buhay, H. Lampe, D.R. and Francombe, M.H. Jl. of Vac. Science and Technology, A10, 1554(1992).CrossRefGoogle Scholar
4. Evans, J.T. and Womack, R.D. IEEE Jl. of Solid State Circuits, 23, 1171(1988).Google Scholar
5. Duiker, H.M. Beale, P.D. Scott, J.F. Araujo, C.A. Paz de, Melnick, B.M. Cuchiaro, J.D. and McMillan, L.D. A1. of Appl. Phys., 68, 5783(1990).Google Scholar
6. Dey, S.K. and Zuleeg, R. Ferroelectrics, 108, 37(1990).CrossRefGoogle Scholar
7. Shepherd, W.H. in Proc. of Materials Research Society Fall Meeting Symposium on Ferroelectric Thin Films I, Vol. 200, p207, Eds. Kingon, A. and Myers, E.R. Materials Research Society, Pittsburgh, PA, Dec., 1990.Google Scholar
8. Scott, J.F. Araujo, C.A. Paz de, Melnick, B.M. McMillan, L.D. and Zuleeg, R. JI. of Appl. Phys., 70, 382(1991); J.F.Scott C.A.Paz de Araujo, H.B. Meadows L.D.McMillan and A. Shawabkeh A1. of Appi. Phys., 66, 1444(1989).CrossRefGoogle Scholar
9. Spierings, G.A.C.M. Ulenaers, M.J.E. Kampschoer, G.L.M. Hal, H.A.M. van and Larsen, P.K. A1. of Appl. Phys., 70, 2290(1991).CrossRefGoogle Scholar
10. Miller, S.L. Nasby, R.D. Schwank, J.R. Rodgers, M.S. and Dressendorfer, P.V. A1. of Appl. Phys., 68, 6463(1990).Google Scholar
11. Abt, N.E. Misic, P. Zehngut, D. and Regan, E. Proc. of Fourth Int. Symp. on Integrated Ferroelectrics, Monterey, CA, March 1992; S.D. Bernstein T.Y. Wong Y.Kisler and R.W. Tustison ibid; S.B.Desu and I.K. Yoo ibid.Google Scholar
12. Wolf, R.M. in Materials Research Society Fall Meeting Symposium on Ferroelectric Thin Films II. Boston, MA, Dec., 1991; J.T. Cheung and R.R. Neurgaonkar in Proc. of Fourth Int. Symp. on Integrated Ferroelectrics, Monterey, CA, March 1992.Google Scholar
13. Ramesh, R. Chan, W.K. Wilkens, B. Gilchrist, H. Sands, T. Tarascon, J.M. Keramidas, V.G. Fork, D.K. Lee, J.J. and Safari, A. Appi. Phys. Lett., 61, 1537(1992).Google Scholar