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Fermi-Level Effect on Group III Atom Interdiffusion in III-V Compounds: Bandgap Heterogeneity and Low Silicon-Doping

Published online by Cambridge University Press:  10 February 2011

C.-H. Chen ,
U. Gösele  and
T. Y. Tan
C.-H. Chen
Affiliation:
Department of Mechanical Engineering and Material Science, Duke University Durham, NC 27708–0300
U. Gösele
Affiliation:
Department of Mechanical Engineering and Material Science, Duke University Durham, NC 27708–0300
T. Y. Tan
Affiliation:
Department of Mechanical Engineering and Material Science, Duke University Durham, NC 27708–0300
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Abstract

Heavy n-doping enhanced disordering of GaAs based III-V semiconductor superlattice or quantum well layers, as well as the diffusion of Si in GaAs have been previously explained by the Fermi-level effect model with the triply-negatively-charged group III lattice vacancies identified to be the responsible point defect species. These vacancies have a thermal equilibrium concentration proportional to the cubic power of the electron concentration n, leading to the same dependence of the layer disordering rate. In this paper, in addition, we take into account also the electric field effect produced by the material bandgap heterogeneity and/or hetero-junctions. In heavily n-doped or long time annealing cases, this effect is negligible. At low n-doping levels and for short annealing times, the layer disordering rate can be enhanced or reduced by this effect. Available experimental results of low Si-doped and very short-time annealed samples have been satisfactorily fitted using the Fermi-level effect model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 105
Copyright
Copyright © Materials Research Society 1998

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References

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