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Fault Structures in CVD Silicon Nitride

Published online by Cambridge University Press:  21 February 2011

T.M. Shaw ,
J.W. Steeds  and
D.R. Clarke
T.M. Shaw
Affiliation:
Structural Ceramics Group, Rockwell International Science Center, Thousand Oaks, California 91360
J.W. Steeds
Affiliation:
Physics Dept., University of Bristol, England
D.R. Clarke
Affiliation:
Materials Science Dept., MIT, Cambridge, Mass.
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Abstract

Fault structures occurring in crystalline CVD silicon nitride deposits have been examined using transmission electron microscopy. A variety of mixed rotation and displacement faults are observed. The faults have extensive basal plane facets but also extend onto other planes within the grains. Possible structures for the faults are discussed with reference fo the structures of the a and P silicon nitride polymorphs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 31: Symposium N – Electron Microscopy of Materials , 1983 , 325
Copyright
Copyright © Materials Research Society 2006

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References

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