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Faster Quenching by Silicon Pulsed Laser Annealing Under Water

Published online by Cambridge University Press:  28 February 2011

A. Polman ,
S. Roorda ,
S. B. Ogale  and
F. W. Saris
A. Polman
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
S. Roorda
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
S. B. Ogale
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
F. W. Saris
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

A novel method of pulsed laser processing of ion-implanted silicon is presented, in which samples are irradiated in water ambient. The water layer in contact with the silicon during irradiationh as a considerable influence on melting and solidificationd ynamics. Still, perfect epitaxy of a thin amorphous layer can be obtained using this method.

For epitaxy to occur on a sample irradiated under water, 40 % more absorbed energy is necessary than for a sample irradiated in air. This indicates the occurrence of a considerable heat-flow from the silicon into the water layer during the laser pulse. From impurity redistribution after irradiation it is found that by processing a sample under water liquid-phase diffusion is reduced. Diffusion theory arguments indicate that this can be due to a reduction in total melt duration by about afactor 2–3. This can be due to faster cooling of the liquid silicon layer after the laser pulse whereas the melt-in time might be influenced as well. As a consequence, shallower impurity profiles can be obtained in crystalline silicon. No oxygen incorporation is detected and the surface morphology is not disturbed using this new process.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 129
Copyright
Copyright © Materials Research Society 1987

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References

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