Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T09:39:52.206Z Has data issue: false hasContentIssue false
  • English
  • Français

Fast Scanned Energy Beam Induced Explosive Crystallization of Ion Implantation Amorphized Poly and Single Crystal Silicon Substrates

Published online by Cambridge University Press:  15 February 2011

M. Lerme ,
T. Ternisien D'ouville ,
Duy-Phach Vu ,
A. Perio ,
G.A. Rozgonyi  and
V. T. Nguyen
M. Lerme
Affiliation:
CNET BP.42, 38240 MEYLAN, FRANCE
T. Ternisien D'ouville
Affiliation:
CNET BP.42, 38240 MEYLAN, FRANCE
Duy-Phach Vu
Affiliation:
CNET BP.42, 38240 MEYLAN, FRANCE
A. Perio
Affiliation:
CNET BP.42, 38240 MEYLAN, FRANCE
G.A. Rozgonyi
Affiliation:
CNET BP.42, 38240 MEYLAN, FRANCE
V. T. Nguyen
Affiliation:
CNET BP.42, 38240 MEYLAN, FRANCE
Get access

Abstract

Explosive crystallisation induced by an electron beam and by a CW Ar+ laser operating in fast scanning mode is observed for the first time on amorphized silicon layers created by implantation on either polycrystalline films deposited on Si02 or single crystal silicon substrates. The grain structure in the explosive crescents is studied by preferential chemical etching in conjunction with Nomarski optical microscopy, SEM and TEM. The results are similar to the so-called solid-phase explosive crystallization previously observed in a-Si films deposited on glass substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 547
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yep, T.O., Fulks, R.T. and Powell, R.A., Appl. Phys. lett. 38, 162 (1981)Google Scholar
2. LEAMY, H.J., J. Vac. Sci. Technol., 18, 208 (1981)Google Scholar
3. AUVERT, G., BENSAHEL, D., GEORGES, A., NGUYEN, V.T., HENOC, P., MORIN, F. and COISSARD, P., Appl. Phys. Lett., 38, 613 (1981)Google Scholar
3a AUVERT, G., BENSAHEL, D., PERIO, A., NGUYEN, V.T. and ROZGONYI, G.A., Appl. Phys. Lett., 39, 724 (1981) G. AUVERT, A. PERIO and F. MORIN, these proceedings. D. BENSAHEL and G.A. ROZGONYI, these proceedings.Google Scholar
4. SECCO D'ARAGONA, F., J. Electrochem. Soc., 119, 948 (1972)Google Scholar