Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T09:25:24.540Z Has data issue: false hasContentIssue false
  • English
  • Français

Fast Scan Laser Annealing

Published online by Cambridge University Press:  15 February 2011

John T. Schott
John T. Schott*
Affiliation:
Sperry Research Center, 100 North Road, Sudbury, Massachusetts
Get access

Abstract

Laser-annealing phenomena have typically been divided into two distinct realms. Pulsed lasers involved very short anneal times and small deposited energy densities. Slowly scanned cw lasers involved intermediate times (ms range) and larger energy densities. Repetitively scanned electron beams have extended the range of anneal time and energy density toward conventional thermal processing. This paper examines the regime between pulsed laser annealing and conventional cw laser annealing. By greatly increasing the scan speed of the laser, annealing times and deposited energy densities are reduced and approach those of pulsed laser annealing. Applications are discussed in the areas of silicon-on-insulator recrystallization, low resistivity poly, vertical integration, local lateral seeding, explosive crystallization, and line-source simulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 517
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tasch, A. F. Jr. et al. , Electron. Lett. 15, 435 (1979).CrossRefGoogle Scholar
2. Gat, A. and Moore, J., Coherent Inc., Palo Alto, CA, private communication.Google Scholar
3. Biegelsen, D. K. et al. in Laser and Electron-Beam Solid Interactions and Materials Processing, Gibbons, J. F. et al. eds. (Elsevier North Holland, New York 1981) pp. 487–494.Google Scholar
4. Maby, E. W. et al. , Electron Dev. Lett. EDL–2, 241 (1981).CrossRefGoogle Scholar
5. Schott, J. T., to be published.Google Scholar
6. Lam, H. W. et al. , J. Electrochem. Soc. 128, 1981 (1981).CrossRefGoogle Scholar
7. Auvert, G. et al. , Appl. Phys. Lett. 38, 613 (1981).CrossRefGoogle Scholar
8. Antoniadis, D. and Maby, E., MIT, Cambridge, MA, private communication.Google Scholar