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Fast light-induced change in ellipsometry spectra of hydrogenated amorphous silicon measured through a transparent substrate upon bias light illumination

Published online by Cambridge University Press:  17 March 2011

N. Hata ,
C. M. Fortmann  and
A. Matsuda
N. Hata
Affiliation:
National Institute of Advanced Industrial Science and Technology, AIST Central 2, Tsukuba, Ibaraki 305-8568, Japan
C. M. Fortmann
Affiliation:
Dept. Applied Mathematics, State University of New York at Stony Brook, Stony Brook, NY 11794-3600, USA
A. Matsuda
Affiliation:
National Institute of Advanced Industrial Science and Technology, AIST Central 2, Tsukuba, Ibaraki 305-8568, Japan
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Abstract

Previous ellipsometric studies of the stability of amorphous silicon (a-Si:H) found reversible changes in the pseudo-dielectric functions. These changes were slow to generate and slow to anneal away. These slow changes are associated with a dangling bond related structural change. Since any light-induced change in the dielectric function is useful for photonic engineering, we undertook the present more detailed study of light induced optical effects in a-Si:H. The optical pseudo-dielectric functions of hydrogenated amorphous silicon (a-Si:H) were measured using spectroscopic ellipsometry (SE) and the “through-the-substrate” measurement technique as a function of measurement temperature and bias light illumination. For the first time we report a light-induced change in a-Si:H materials that is fast, bias-light-dependent, reversible, and temperature dependent. This effect, while not completely understood, offers exciting new prospects for photonic engineering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A19.5
Copyright
Copyright © Materials Research Society 2001

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References

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