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Fast Deposition of Polycrystalline Silicon Films by Hot-Wire CVD

Published online by Cambridge University Press:  15 February 2011

A. R. Middya ,
A. Lloret ,
J. Perrin ,
J. Huc ,
J. L. Moncel ,
J. Y. Parey  and
G. Rose
A. R. Middya
Affiliation:
Laboratoire de Physique des Interfaces des Couches Minces, Ecole Polytechnique, CNRS UPR A 0258, F- 91128 Palaiseau, France
A. Lloret
Affiliation:
Laboratoire de Physique des Interfaces des Couches Minces, Ecole Polytechnique, CNRS UPR A 0258, F- 91128 Palaiseau, France
J. Perrin
Affiliation:
Laboratoire de Physique des Interfaces des Couches Minces, Ecole Polytechnique, CNRS UPR A 0258, F- 91128 Palaiseau, France
J. Huc
Affiliation:
Laboratoire de Physique des Interfaces des Couches Minces, Ecole Polytechnique, CNRS UPR A 0258, F- 91128 Palaiseau, France
J. L. Moncel
Affiliation:
Laboratoire de Physique des Interfaces des Couches Minces, Ecole Polytechnique, CNRS UPR A 0258, F- 91128 Palaiseau, France
J. Y. Parey
Affiliation:
Laboratoire de Physique des Interfaces des Couches Minces, Ecole Polytechnique, CNRS UPR A 0258, F- 91128 Palaiseau, France
G. Rose
Affiliation:
Laboratoire de Physique des Interfaces des Couches Minces, Ecole Polytechnique, CNRS UPR A 0258, F- 91128 Palaiseau, France
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Abstract

Polycrystalline silicon thin films have been deposited at fast growth rates (50 Å/s) by hotwire chemical vapour deposition (HW-CVD) from SiH4/H2 gas mixtures at low substrate temperature (400–500°C). The surface morphology of these films consists of 0.5 – 2.0μm dendritic grains as seen by electron microscopy. The films have a columnar morphology with grains starting from the substrate either on glass or c-Si. Even the 150 nm thick initial layer is polycrystalline. The preferential crystalline orientation of the poly-Si film is apparently not governed by the radiative source but strongly depends on the type and orientation of the substrate. A strong hydrogen dilution (>90%) of silane is essential to obtain poly-Si films with optimal crystalline structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 119
Copyright
Copyright © Materials Research Society 1995

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References

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