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Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive

Published online by Cambridge University Press:  01 February 2011

Galyna Melnychuk ,
Huang De Lin ,
Siva Prasad Kotamraju  and
Yaroslav Koshka
Galyna Melnychuk
Affiliation:
[email protected], Mississippi State University, 216 Simrall Hall, Box 9571, Mississippi State, MS, 39762, United States
Huang De Lin
Affiliation:
[email protected], Mississippi State University, 216 Simrall Hall, Box 9571, Mississippi State, MS, 39762, United States
Siva Prasad Kotamraju
Affiliation:
[email protected], Mississippi State University, 216 Simrall Hall, Box 9571, Mississippi State, MS, 39762, United States
Yaroslav Koshka
Affiliation:
[email protected], Mississippi State University, 216 Simrall Hall, Box 9571, Mississippi State, MS, 39762, United States
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Abstract

In this work, a possibility to further suppress silicon vapor condensation and formation of Si clusters in order to improve the growth rate and morphology during the low-temperature halo-carbon epitaxial growth of 4H-SiC was investigated. While a pronounced dissociating of Si clusters was clearly demonstrated, the enhancement of the growth rate and morphology was less significant then expected. In addition, the homogeneity of the growth rate and doping along the gas flow direction indicated that a significant and non-equal depletion of Si and C growth species takes place at sufficiently high HCl supply. HCl flow-dependent formation of polycrystalline Si and SiC deposits in the upstream portion of the hot zone was shown to be the source of this depletion.

Keywords

epitaxychemical vapor deposition (CVD) (deposition)Cl
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D05-03
Copyright
Copyright © Materials Research Society 2008

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References

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