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Factors Influencing the Electrical and Optical Properties of Aigan Layers on Sapphire

Published online by Cambridge University Press:  15 February 2011

M. Shin ,
A. Y. Polyakov ,
M. Skowronski ,
D. W. Greve ,
R. G. Wilson  and
J. A. Freitas
M. Shin
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213–3890, [email protected]
A. Y. Polyakov
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213–3890, [email protected]
M. Skowronski
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213–3890, [email protected]
D. W. Greve
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213–3890
R. G. Wilson
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
J. A. Freitas
Affiliation:
Sachs/Freeman Assoc. Inc., Landover, MD 20785, Naval Research Laboratory: Contract N00014-93-C-2227
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Abstract

Epitaxial layers of A1xGa1-xN were grown by MOCVD on sapphire substrates and characterized by temperature dependent Hall effect, optical absorption, SIMS and photoluminescence. The concentration of native donors was found to decrease with increase of growth temperature. Deep levels found in A1GaN layers were interpreted as A1 double donor state and T2 donor state of nitrogen vacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 643
Copyright
Copyright © Materials Research Society 1996

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References

[1] Morkoc, . H., Strite, S., Gao, G.B., Lin, M.E., Sverdlov, B. and Burns, M., J. Appl. Phys, 76, 1363 (1994)Google Scholar
[2] strite, . S. and Morkoc, H., J. Vac. Sci. Technol.,B10, 1237 (1992)Google Scholar
[3] Gaskill, . D.K., Rowland, L.B. and Doverspike, K., Electrical Properties of AIN, GaN and AlGaN, in Properties of Group III Nitrides, edited by Edgar, J.H. ( INSPEC Publications, London, 1994) pp. 101–116 Google Scholar
[4] Yoshida, . S., Misawa, S. and Gonda, S., J. Appl. Phys., 53, 6844 (1982)Google Scholar
[5] Zhang, . X., Kung, P., Saxler, A., Walker, D., Wang, T.C. and Razhegi, M., Appl. Phys. Lett., 67, 1745 (1995)Google Scholar
[6] Murakami, . H., Asahi, T., Amano, H., Hiramatsu, K., Sawaki, N. and Akasaki, I., J. Cryst. Growth, 115, 648 (1991)Google Scholar
[7] Miragliotta, . J.A., Optical Functions of GaN, in Properties Of Group III Nitrides, edited by Edgar, J.H. (INSPEC Publications, London, 1994) pp. 190–194 Google Scholar
[8] Loughin, . S. and French, R.H., Optical Functions of AIN,Google Scholar
[9] Wilson, . R.G., Stevie, F.A. and Magee, C.W., Secondary Ion Mass Spectrometry (Wiley, New York, 1989)Google Scholar
[10] Jenkins, . D.W., Dow, J.D. and Tsai, M-H., J. Appl. Phys., 72, 4130 (1992)Google Scholar
[11] Polyakov, . A.Y., Shin, M., Skowronski, M., Greve, D.W., Pearton, S.J. and Freitas, J.A., this volumeGoogle Scholar
[12] Strite, . S.C., Impurities and Dopants in Group III Nitrides, in Properties of Group III Nitrides, edited by Edgar, J.H. (INSPEC Publications, London, 1994) pp. 272–278 Google Scholar