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Factors Governing the Photoluminescence Yield of Erbium Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

W. Jantsch ,
H. Przybylinska ,
C. Skierbiszewski ,
S. Lanzerstorfer  and
L. Palmetshofer
W. Jantsch
Affiliation:
Johannes Kepler Universität, A-4040 Linz, Austria, [email protected]
H. Przybylinska
Affiliation:
Inst. of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
C. Skierbiszewski
Affiliation:
Unipress, Polish Academy of Sciences, Soklowska 29/37, 01-142 Warsaw, Poland
S. Lanzerstorfer
Affiliation:
Johannes Kepler Universität, A-4040 Linz, Austria, [email protected]
L. Palmetshofer
Affiliation:
Johannes Kepler Universität, A-4040 Linz, Austria, [email protected]
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Abstract

We present a high resolution photoluminescence (PL) study of Si:Er which allows to distinguish a variety of Er centers occurring in Er-implanted Si. The lines belonging to a particular center are identified from the influence of processing parameters, temperature, excitation power, co-doping and hydrostatic pressure. The center-dependent high temperature yield is limited by the competition in efficiency of capturing excitons at Er centers or nearby defects followed by the excitation transfer to the Er-4f shell and by recombination of excitons at other, non-radiative centers. The excitation transfer probability is shown to depend on hydrostatic pressure of a few kbar. This effect indicates a new possibility to improve the efficiency of Si:Er light emitters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 101
Copyright
Copyright © Materials Research Society 1996

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References

1. Ennen, H., Pomrenke, G., Axmann, A., Eisele, K., Haydl, W., and Schneider, J., Appl. Phys. Lett. 46, 381 (1985)Google Scholar
2. Tang, Y.S., Heasman, K.C., Gillin, W.P., and Sealy, B.J., Appl. Phys. Lett. 55, 432 (1989)Google Scholar
3. Benton, J.L., Michel, J., Kimerling, L.C., Jacobson, D.C., Xie, Y.-H., Eaglesham, D.J., Fitzgerald, E.A., and Poate, J.M., J. Appl. Phys. 70, 2667 (1991)Google Scholar
4. Coffa, S., Franzo, G., Priolo, F., Polman, A., and Sema, R., Phys. Rev. B 49, 163313 (1994)Google Scholar
5. Ren, F.Y.G., Michel, J., Sun-Paduano, Q., Zheng, B., Kitagawa, H., Jacobson, D.C., Poate, J.M., and Kimerling, L.C.; Mat. Res. Soc. Symp. Proc. 301, 87 (1993)Google Scholar
6. Michel, J., Ren, F.Y.G., Zheng, B., Jacobson, D.C., Poate, J.M., and Kimerling, L.C., Materials Science Forum 143–147, 707 (1994)Google Scholar
7. Adler, D.L., Jacobson, D.C., Eaglesham, D.J., Marcus, M.A., Benton, J.L., Poate, J.M., and Citrin, P.H.; Appl. Phys. Lett. 61 (1992) 2181 Google Scholar
8. Eaglesham, D.J., Michel, J., Fitzgerald, E.A., Jacobson, D.C., Poate, J.M., Benton, J.L., Polman, A., Xie, Y.H., and Kimerling, L.C., Appl. Phys. Lett. 48, 2797 (1991)Google Scholar
9. Franzo, G., Priolo, F., Coffa, S., Polman, A., and Camera, A., Appl. Phys. Lett. 64, 2235 (1994)Google Scholar
10. Przybylinska, H., Enzenhofer, J, Hendorfer, G., Schoisswohl, M., Palmetshofer, L. and Jantsch, W., Mat. Science Forum 143–147, 714 (1994)Google Scholar
11. Przybylinska, H., Hendorfer, G., Bruckner, M., Palmetshofer, L., and Jantsch, W., Appl. Phys. Lett. 66, 490 (1995)Google Scholar
12. Przybylinska, H., Jantsch, W., Belevich, Yu. Suprun, Stepikhova, M, Palmetshofer, L., Hendorfer, G., Kozanecki, A., Wilson, R.J., and Sealy, B.J., PRB, submittedGoogle Scholar
13. Jantsch, W., Hendorfer, G., Bruckner, M., Palmetshofer, L., and Przybylinska, H., Proc. XXII. Int. Conference on the Physics of Semiconductors, ed. by Lockwood, D. J., (World Scientific Publishing, Singapore 1995) p 2411 Google Scholar
14. Jantsch, W., Wtinstel, K., Kumagai, O., and Vogl, P., Phys. Rev. B 25, 5515 (1982)Google Scholar
15. Przybylinska, H., Hendorfer, G., Bruckner, M., Jantsch, W., and Palmetshofer, L., Journal of Alloys and Compounds 225, 555 (1995)Google Scholar
16. Jung Shin, H., van den Hoven, G. N., Polman, A., Appl. Phys. Lett. 67, 377 (1995)Google Scholar
17. Davies, G., Physics Reports 176, 85ff (1989)Google Scholar
18. Jantsch, W., Przybylinska, H., Belevich, Yu. Suprun, Stepikhova, M., Hendorfer, G., and Palmetshofer, L., Materials Science Forum 196–201, 609 (1995)Google Scholar
19. Takarabe, K., Mizushima, T., Minomura, S., Taguchi, A., and Takahei, K., Materials Science Forum 196–201, 645 (1995)Google Scholar
20. Wiinstl, K., Kumagai, O., Wagner, P., and Jantsch, W., Appl. Phys. A 27, 251 (1982)Google Scholar
21. Langer, J.M., in Electroluminescence, Springer Proceedings in Physics, edited by Shionoya, S. and Kobayashi, H., Vol. 38, pp. 16–23 (Springer, Berlin Heidelberg, 1989)Google Scholar
22. Sema, R., Lohmeier, M., Zagwijn, P.M., Vlieg, E. and Polman, A., Appl. Phys. Lett. 66, 1385 (1995)Google Scholar