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Facet Formation on One-Dimensionally, Periodic Si Substrates
Published online by Cambridge University Press: 15 February 2011
Abstract
The development of surface morphology during homoepitaxial growth on one-dimensionally periodic, patterned Si substrates and subsequent annealing has been investigated using transmission electron Microscopy. Si layers grown by MBE are characterized in terms of facets which develop at a trench edge. 1000 Å thick films deposited at ∼ 600°C on Si substrates develop large (311) facets at the bottom and top of the sidewall. After annealing at high temperatures for short times (∼ 1 hour), the amplitude of corrugation decreases but the surface profile is facetted along its length. The “annealed shape” at the trench edge is shown to consist of several surfaces including: (211), (311), (511), and (711). This evidence suggests that (311) facets develop as a result of the growth kinetics.
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- Copyright © Materials Research Society 1994
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