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Fabrication of the Large-Area Integrated a-Si Solar Cells

Published online by Cambridge University Press:  28 February 2011

S. Yamazaki ,
M. Abe ,
S. Nagayama ,
K. Shibata ,
M. Susukida ,
T. Fukada ,
M. Kinka ,
I. Kobayashi ,
T. Inushima  and
K. Suzuki
S. Yamazaki
Affiliation:
Semiconductor Energy Laboratory, Co., Ltd. 398 Hase, Atsugi-shi, Kanagawa-ken 243 Japan
M. Abe
Affiliation:
Semiconductor Energy Laboratory, Co., Ltd. 398 Hase, Atsugi-shi, Kanagawa-ken 243 Japan
S. Nagayama
Affiliation:
Semiconductor Energy Laboratory, Co., Ltd. 398 Hase, Atsugi-shi, Kanagawa-ken 243 Japan
K. Shibata
Affiliation:
Semiconductor Energy Laboratory, Co., Ltd. 398 Hase, Atsugi-shi, Kanagawa-ken 243 Japan
M. Susukida
Affiliation:
Semiconductor Energy Laboratory, Co., Ltd. 398 Hase, Atsugi-shi, Kanagawa-ken 243 Japan
T. Fukada
Affiliation:
Semiconductor Energy Laboratory, Co., Ltd. 398 Hase, Atsugi-shi, Kanagawa-ken 243 Japan
M. Kinka
Affiliation:
Semiconductor Energy Laboratory, Co., Ltd. 398 Hase, Atsugi-shi, Kanagawa-ken 243 Japan
I. Kobayashi
Affiliation:
Semiconductor Energy Laboratory, Co., Ltd. 398 Hase, Atsugi-shi, Kanagawa-ken 243 Japan
T. Inushima
Affiliation:
Semiconductor Energy Laboratory, Co., Ltd. 398 Hase, Atsugi-shi, Kanagawa-ken 243 Japan
K. Suzuki
Affiliation:
Semiconductor Energy Laboratory, Co., Ltd. 398 Hase, Atsugi-shi, Kanagawa-ken 243 Japan
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Abstract

PIN-structure small-area solar cells using a-Si have been frequently reported on, but only a few reports are available on the study of solar cells using a large-area (10-cm square) substrate, all with a resultant conversion efficiency of above 9.0 %[1,2]. Our study has been concentrated on solar cells using a batch of ten 10-cm square substrates with an average conversion efficiency of 9.5 % or more.

As a result, without an anti-reflection coating on the surface of the glass substrate, the following values have been obtained: average conversion efficiency (EFF)=9.63 % (standard deviation of 0.195 %) -Open-circuit voltage (Voc)=12.668 V (standard deviation of 0.215 V) -Short-circuit current (Isc)=78.467 mA (standard deviation of 1.619 mA) -Fill factor (FF)=0.6672 (standard deviation of 0.009)

The process, equipment and methods for measurements through which these results were obtained are described below.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 487
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Tsuda, S., Takahama, T., Tarui, H., Watanabe, K., Nakamura, N., Shibuya, H., Nakano, S., Ohnishi, M., Kishi, Y. and Kuwano, Y., presented at 18th IEEE PVSEC, 1985 October Meeting, Las Vegas, Nevada.Google Scholar
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