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The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation

Published online by Cambridge University Press:  01 February 2011

Prabhakar Bandaru ,
Subal Sahni ,
Eli Yablonovitch ,
Hyung-Jun Kim  and
Ya-Hong Xie
Prabhakar Bandaru
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095
Subal Sahni
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095
Eli Yablonovitch
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095
Hyung-Jun Kim
Affiliation:
Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095
Ya-Hong Xie
Affiliation:
Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095
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Abstract

We report on the low temperature growth, by molecular beam epitaxy (375 °C) and electron-beam evaporation (300 °C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke Ge diffusion and growth modes as a function of deposition temperature and rate to correlate structural analysis with the device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 796: Symposium V – Critical Interfacial Issues in Thin Film Optoelectronic and Energy Conversion Devices , 2003 , V2.8
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Fitzgerald, E. A. & Kimmerling, L. C., MRS Bulletin 23, 39 (1998).Google Scholar
2. Watson, G. P., Fitzgerald, E. A., Xie, Y. H. & Monroe, D., J. Appl. Phys., 75, 263 (1994).Google Scholar
3. Thompson, P. E., Twigg, M. E., Godbey, D. J., Hobart, K. D. & Simons, D. S., J. Vac. Sci. & Tech. B 11, 1077 (1993).Google Scholar
4. Eaglesham, D. J., Higashi, G. S. & Cerullo, M., Appl. Phys. Lett. 59, 685 (1991).Google Scholar
5. Trucks, G. W., Raghavachari, K., Higashi, G. S. & Chabal, Y. J., Phys. Rev. Lett. 65, 504 (1990).Google Scholar
6. Grunthaner, F. J. & Grunthaner, P. J. Mat. Sci. Reports, 1, 65 (1986).Google Scholar
7. Eaglesham, D. J. & Cerullo, M. Phys. Rev. Lett., 64, 1943 (1990).Google Scholar
8. Bandaru, P. R., Sahni, S., Yablonovitch, E., Kim, H.-J. & Xie, Y.-H., J. Appl. Phys. (submitted).Google Scholar
9. Holmes, P. J. in The Electrochemistry of Semiconductors (ed. Holmes, P. J.), Academic Press, New York, (1962).Google Scholar
10. Grove, A. S. Physics & Tech. of Semiconductor Devices, John Wiley, New York, (1967).Google Scholar
11. Masini, G., Colace, L. & Assanto, G., “Germanium Thin Films on Silicon for detection of near-infrared light” (ed. Nalwa, H. S.), Academic Press, New York, (2002).Google Scholar
12. Jeong, S. & Oshiyama, A., Phys. Rev. Lett., 79, 4425 (1997).Google Scholar
13. Fitzgerald, E. A., Mat. Sci. Reports 7, 87 (1991).Google Scholar
14. LeGoues, F. K., Copel, M. & Tromp, R. M., Phys. Rev. B, 42, 11690 (1990).Google Scholar
15. Frotzheim, H., Kohler, U. & Lammerling, H., Surf. Sci., 149, 537 (1985).Google Scholar
16. Thanh, V. L., Bouchier, D. & Hncelin, G., J. Appl. Phys., 87, 3700 (2000).Google Scholar