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Fabrication of Organic Thin Film Transistors Using Low Temperature, Soluble Silicon Oxide as the Gate Dielectrics

Published online by Cambridge University Press:  26 February 2011

Jeng-Hua Wei ,
HorngJiunn Lin  and
Ying-Ren Chen
Jeng-Hua Wei
Affiliation:
[email protected], Ching Yun University, Electronic Engineering, 229, Chien Hsin Rd., Jung-Li, Taiwan, 320, Taiwan
HorngJiunn Lin
Affiliation:
[email protected], Ching Yun University, Electronic Engineering, 229, Chien Hsin Rd., Jung-Li, Taiwan, 320, Taiwan
Ying-Ren Chen
Affiliation:
[email protected], Ching Yun University, Electronic Engineering, 229, Chien Hsin Rd., Jung-Li, Taiwan, 320, Taiwan
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Abstract

In this paper, a unique water-based, liquid phase deposited silicon oxide (LPD SiO2) is adapted to the fabrication process of the organic thin film transistor (OTFT). Through the use of this process, an OTFT with a silicon oxide gate insulator is successfully fabricated at 100°C or less. At this low process temperature, the SiO2 functions efficiently as a gate dielectric with the breakdown field being larger than 5 MV/cm, the leakage current being near 1 pA/um2 with a gate bias of 20 V and the surface roughness being less than 1nm. Due to the high quality silicon oxide, the oxide-gated OTFT shows the low threshold voltage (-1 ∼ -2V) and medium on/off current ratio (∼1000). Because this oxide is a water-based process, it is highly resistant to the following soluble semiconductor material and its solvent.

Keywords

liquidoxideorganic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S06-01
Copyright
Copyright © Materials Research Society 2007

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References

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