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Fabrication of Group IIIA Layered Sulfide Semiconductor Nanostructures by Physical Vapor Deposition Process and Their Enhanced Optical and Electronic Properties

Published online by Cambridge University Press:  20 May 2013

Anuja Datta  and
Pritish Mukherjee
Anuja Datta
Affiliation:
Florida Cluster for Advanced Smart Sensor Technologies & Department of Physics, University of South Florida, Tampa, Fl 33620, USA.
Pritish Mukherjee
Affiliation:
Florida Cluster for Advanced Smart Sensor Technologies & Department of Physics, University of South Florida, Tampa, Fl 33620, USA. Center for Integrated Functional Materials & Department of Physics, University of South Florida, Tampa, Fl 33620, USA.
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Abstract

We report on the fabrication of various high quality GaS nanostructures (angular nanobelts, nanowedges and nanotubes) and In2S3 nanostructures (tapered nanorods, nanobelts and nanowires) by catalyst assisted thermal evaporation process. The morphology and structures of the products were controlled by temperature and position of the substrates with respect to the source material. The morphologies of GaS and In2S3 nanostructures were examined by X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), and energy dispersive spectroscopy (EDS). The optical and electronic properties of the synthesized materials were investigated in order to obtain a better fundamental understanding of the structure-property relationships in these materials which can be extended to other layered sulfide materials systems.

Keywords

nanostructuretransmission electron microscopy (TEM)electrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1550: Symposium Q – Surfaces of Nanoscale Semiconductors , 2013 , mrss13-1550-q03-19
Copyright
Copyright © Materials Research Society 2013 

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References

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