Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-19T03:54:12.788Z Has data issue: false hasContentIssue false

Fabrication of Freestanding Carbon Nanotube Arrays in Large Scale

Published online by Cambridge University Press:  15 March 2011

Z.P. Huang
Affiliation:
Dept. of Physics, Boston College, Chestnut Hill, MA 02467, USA
J. Moser
Affiliation:
Dept. of Physics, Boston College, Chestnut Hill, MA 02467, USA
M. Sennett
Affiliation:
Material Science Team, US Army Soldier Biological & Chemical Command, Research, Natick Soldier Center, One Kansas Street, Natick, Massachusetts, USA
H. Gibson
Affiliation:
Material Science Team, US Army Soldier Biological & Chemical Command, Research, Natick Soldier Center, One Kansas Street, Natick, Massachusetts, USA
M.J. Naughton
Affiliation:
Dept. of Physics, Boston College, Chestnut Hill, MA 02467, USA
J.G. Wen
Affiliation:
Dept. of Physics, Boston College, Chestnut Hill, MA 02467, USA
Z.F. Ren
Affiliation:
Dept. of Physics, Boston College, Chestnut Hill, MA 02467, USA
Get access

Abstract

We have successfully fabricated many freestanding carbon nanotube arrays on silicon substrates. Two sizes of nickel dot arrays have been made by E-beam lithography. It has been found that the size of the carbon nanotubes is closely related to the size of the dot. Compared with our previous report on diameters of about 300 –400 nm, much thinner carbon nanotubes of 100 –150 nm have been made. With even smaller dots, it is expected that even thinner nanotubes of a few tens of nanometers could be made. The nanotube height is controlled by the growth time and nanotube uniformity has been greatly improved by introduction of a two-phase process of nucleation and growth.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Heer, W.A. de, Chatelain, A., and Ugarte, D., Science 270, 1179 (1995)Google Scholar
[2] Rinztler, A.G., Hafner, J.H., Nokolaev, P., Lou, L., Kim, S.G., Tomanek, D., Nordlander, P., Colbert, D.T., Smalley, R.E., Science 269, 1550, (1995)Google Scholar
[3] Satio, Y., Hamaguchi, K., Hata, K., Tohji, K., Kasuya, A., Nishina, Y., Jpn. J. Appl. Phys. 2, 36 L1340, (1997)Google Scholar
[4] Satio, Y., Hamaguchi, K., Hata, K., Uchida, K., Tasaka, Y., Ikazaki, F., Yumura, M., Kasuya, A., Nishina, Y., Nature (London) 389, 554 (1997)Google Scholar
[5] Collins, P.G., Zettl, A., Appl. Phys. Lett. 69, 1969 (1996)Google Scholar
[6] Collins, P.G., Zettl, A., Phys. Rev. B55, 9391 (1997)Google Scholar
[7] Wang, Q.H., Setlur, A.A., Lauerthaas, J.M., dai, J.Y., Seelig, E.W., Chang, R.P.H., Appl. Phys. Lett. 72, 22, 29122913 (1998)Google Scholar
[8] Saito, Y, Uemura, S, Hamaguchi, K, Jpn. J. Appl. Phys. 37, L346348 (1998).Google Scholar
[9] Kim, J.M., Choi, W.B., Lee, N.S., Jung, J.E., Diamond and Materials, 9, 11841189 (2000).Google Scholar
[10] Ren, Z.F., Huang, Z.P., Wang, D.Z., Wen, J.G., Xu, J.W., Wang, J.H., Calvet, L.E., Chen, J., Klemic, J.F., and Reed, M.A., Appl. Phys. Lett. 75, 8, 10861088 (1999)Google Scholar
[11] Ren, Z.F., Huang, Z.P., Xu, J.W., Wang, J.H., Bush, P., Siegal, M.P., and Provencio, P.N., Science, 282, 11051107 (1998).Google Scholar
[12] Iijima, S., Ichihashi, T., Ando, Y., Nature, 356, 776 (1992)Google Scholar