Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-23T14:49:20.909Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of Corundum-Structured α-(InFe)2O3 Alloy Films on Sapphire Substrates by Inserting α-Fe2O3 Buffer Layer

Published online by Cambridge University Press:  07 February 2013

Kazuaki Akaiwa ,
Norihiro Suzuki ,
Kentaro Kaneko  and
Shizuo Fujita
Kazuaki Akaiwa
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
Norihiro Suzuki
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
Kentaro Kaneko
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
Shizuo Fujita
Affiliation:
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8520, Japan
Get access

Abstract

We successfully fabricated corundum-structured α-(InFe)2O3 alloy films on sapphire substrates by inserting α-Fe2O3 buffer layers. The ion compositions in the α-(In1-xFex)2O3 films, x, were artificially tuned for the entire range from 0 to 1 by changing the ion precursor composition in source solution. Magnetic measurements revealed that the α-(In1-xFex)2O3 (x = 0.13) alloy film showed ferromagnetism at 5 K.

Keywords

magnetic propertieschemical vapor deposition (CVD) (deposition)compound
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 221 - 225
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Munekata, H., Ohno, H., von Molnar, S., Segmüller, A., Chang, L. L., and Esaki, L., Phys. Rev. Lett. 63, 1849 (1989).CrossRefGoogle Scholar
Ohno, H., Shen, A., Matsukura, F., Oiwa, A., Endo, A., Katsumoto, S., and Iye, Y., Appl. Phys. Lett. 69, 363 (1996).CrossRefGoogle Scholar
Kaneko, K., Nomura, T.. Kakeya, I., and Fujita, S., Appl. Phys. Express 2, 075501 (2009).CrossRefGoogle Scholar
Dzyaloshinsky, I., J. Phys. Chem. Solids 4, 241 (1958).CrossRefGoogle Scholar
Moriya, T., Phys. Rev. Lett. 4, 228 (1960).CrossRefGoogle Scholar