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Fabrication and Photoelectrical Properties of AZO/SiO2/p-Si Based Device

Published online by Cambridge University Press:  21 March 2011

Z.Q. Ma
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
B. He
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
J. Xu
Affiliation:
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Hubei 430070, P. R. China
L. Zhao
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
F. Li
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
N.S. Zhang
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
X. J. Meng
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
L. Shen
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
C. Shen
Affiliation:
SHU-SolarE PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China
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Abstract

In order to fabricate AZO/SiO2/p-Si heterojunction device and let it be an absorber of ultraviolet response cell. Zinc oxide (ZnO) thin films doped with aluminum (AZO) were deposited on p-Si(100) substrates covered with silicon dioxide (SiO2) by radio frequency magnetron sputtering. The optical and electrical properties of the Al doped - ZnO films were characterized by UV-VIS spectrophotometer, current-voltage measurement, and four point probe technique, respectively. The results show that the device is a typical tunneling diode for minority carrier and a strong obstructing effect from majority carriers. The potential rectifying behavior and photovoltaic characteristic is present at dark current and weak light illumination, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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