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Fabrication and Luminescence of Etched Quantum Rings and Vertically Coupled Dots

Published online by Cambridge University Press:  15 February 2011

G. E. Philippa ,
J. A. Mejia Galeana ,
C. Cassou ,
P. D. Wang ,
C. Guasch ,
B. Vögele ,
M. C. Holland  and
C. M. Sotomayor Torres
G. E. Philippa
Affiliation:
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Britain, [email protected]
J. A. Mejia Galeana
Affiliation:
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Britain, [email protected]
C. Cassou
Affiliation:
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Britain, [email protected]
P. D. Wang
Affiliation:
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Britain, [email protected]
C. Guasch
Affiliation:
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Britain, [email protected]
B. Vögele
Affiliation:
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Britain, [email protected]
M. C. Holland
Affiliation:
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Britain, [email protected]
C. M. Sotomayor Torres
Affiliation:
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Britain, [email protected]
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Abstract

The fabrication of GaAs-GaAIAs coupled quantum dots and of quantum rings using electron beam lithography and dry etching is described. Coupled dots of physical diameter of 500 and 250 nm were fabricated and processed with top electrical contacts to apply an electric field. We show that the emission spectrum of coupled dots is modified by the electric field. Quantum rings of 400 nm outer diameter and wall thickness of 25 nm were fabricated. The emission spectrum from rings showed the quantum well emission shifted to higher energies and although its intensity decreased by about one order of magnitude there was little linewidth broadening.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 307
Copyright
Copyright © Materials Research Society 1996

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References

1. see, for example, Kash, K., J. Luminescence 46, 69 (1990); and papers in Science and Engineering of One- and Zero-Dimensional Semiconductors, edited by S P Beaumont and C M Sotomayor Torres (NATO ASI Series B Vol.241, Plenum, New York, (1990).Google Scholar
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