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Fabrication And Characterization of Thermoelectric Generators From SiGe Thin Films

Published online by Cambridge University Press:  01 February 2011

S. Budak ,
S. Guner ,
T. Hill ,
M. Black ,
S. B. Judah ,
C. I Muntele  and
D. ILA
S. Budak
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, 4900 Meridian Street, Normal, AL, 35762, United States, 1-256-372-5894, 1-256-372-5855
S. Guner
Affiliation:
[email protected],edu, Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, Normal, AL, 35762, United States
T. Hill
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, 4900 Meridian Street, Normal, AL, 35762, United States
M. Black
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, 4900 Meridian Street, Normal, AL, 35762, United States
S. B. Judah
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, 4900 Meridian Street, Normal, AL, 35762, United States
C. I Muntele
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, Normal, AL, 35762, United States
D. ILA
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, Normal, AL, 35762, United States
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Abstract

Thermoelectric materials are being important due to their application in both thermoelectric power generation and microelectronic cooling. The thermoelectric power generations convert the heat change to electricity. The waste of heat could be useful if the thermoelectric power generation is applied. Effective thermoelectric materials have a low thermal conductivity and a high electrical conductivity. A high thermal conductivity causes too much heat leakage through heat conduction. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. ZT can be increased by increasing S, increasing σ, or decreasing K. In this study, we prepared thermoelectric generator devices of SiGe at the thickness of 112 nm using the ion beam assisted deposition (IBAD) system. Rutherford Backscattering Spectrometry (RBS) analysis was used for the elemental analysis. The 5 MeV Si ion bombardment was performed using the AAMU Pelletron ion beam accelerator to make quantum clusters in the film to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardment we measured the cross plane Seebeck coefficient, electrical conductivity by Van der Pauw method, and thermal conductivity by 3w method for different fluences.

Keywords

ion-beam assisted depositionthermoelectricitynanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1102: Symposium LL – Energy Harvesting–From Fundamentals to Devices , 2008 , 1102-LL05-03
Copyright
Copyright © Materials Research Society 2008

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