Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-06T02:16:05.818Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication and Characterization of Cold Electron Emitter Based on Nanocrystalline Silicon Dots

Published online by Cambridge University Press:  17 March 2011

K. Nishiguchi ,
X. Zhao  and
S. Oda
K. Nishiguchi
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
X. Zhao
Affiliation:
Department of Physics, Science University of Tokyo, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
S. Oda
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Get access

Abstract

A cold electron emitter has been made from nanocrystalline silicon (nc-Si) dots. Nc-Si dots are formed in the gas phase by very-high-frequency (VHF) plasma enhanced chemical vapor deposition (CVD). Electrons, accelerated by electric field, are ballistically transported through nc-Si and SiO2, then extracted into vacuum. Electron emission efficiency is optimized through varying nc-Si film thickness, surface roughness, and by short thermal oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.9.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nicolaescu, D., Appl. Surf. Sci. 87, 61 (1995)Google Scholar
2. Ito, S., Watanabe, T., Ohtsu, K., Taniguchi, M., Uzawa, S., and Nishimura, N., J. Vac. Sci. Technol. B 13, 487 (1995)Google Scholar
3. Heer, W. A. de, Chatelain, A., and Ugarte, D., Science 270, 1179 (1995)Google Scholar
4. Choi, W. B., Chung, D. S., Kang, J. H., Kim, H. Y., Jin, Y. W., Han, I. T., Lee, Y. H., Jung, J. E., Lee, N. S., Park, G. S., and Kim, J. M., Appl. Phys. Lett. 75, 3129 (1999)Google Scholar
5. Koshida, N., Sheng, X., and Komada, T., Appl. Surf. Sci. 146, 371(1999)Google Scholar
6. Ifuku, Toru, Otobe, Masanori, Itoh, Akira and Oda, Shunri, Jpn. J. Appl. Phys. 36, 4031 (1997)Google Scholar
7. Sheng, X. and Koshida, N., Mat. Res. Soc. Proc. 509, 193 (1998)Google Scholar
8. Komoda, T., Sheng, X., and Koshida, N., J. Vac. Sci. Technol. B 17, 1076 (1999)Google Scholar
9. Nishiguchi, K., Hara, S., Amano, T., Hatatani, S. and Oda, S., Mat. Res. Soc. Proc. 571, 43 (2000)Google Scholar