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Fabrication and Characterization of Artificially Designed PZT/LSMO Multiferroics Heterostructure

Published online by Cambridge University Press:  31 January 2011

Sandra Dussan ,
Ashok Kumar  and
Ram S. Katiyar
Sandra Dussan
Affiliation:
[email protected], University of Puerto Rico, Department of Physics and Institute for Functional Nanomaterials, San Juan, Puerto Rico
Ashok Kumar
Affiliation:
[email protected], University of Puerto Rico, Department of Physics and Institute for Functional Nanomaterials, San Juan, Puerto Rico
Ram S. Katiyar
Affiliation:
[email protected], University of Puerto Rico, Department of Physics and Institute for Functional Nanomaterials, San JUan, Puerto Rico
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Abstract

Highly oriented and epitaxial bilayers of PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3 (PZT/LSMO) thin films have been grown by pulsed laser deposition on two different substrates (100) - MgO and -LaAlO3 (LAO) respectively. The structural analysis using X-ray diffraction (XRD) evidenced that layered structure was formed without any secondary phase. Atomic force microscopy (AFM) images shown change in the grain size and surface roughness with change of the substrate. Room temperature magnetization-field (M-H) exhibited well-shaped magnetization hysteresis loops, good saturation and low coercivity. The electrical properties of hetrostructure exhibited high remnant polarization (30-54 μC/cm2) and dielectric constant (400-1700) depending upon the different substrate and temperature deposition of FM layer. Frequency dependent change in dielectric constant and loss were observed above metallic ferromagnet to insulator paramagnet transition temperature. It is important to note that the frequency dependent dielectric anomalies are attributed to the change in metallic nature of LSMO bottom electrode and also the bilayer.

Keywords

ferroelectricferromagneticphysical vapor deposition (PVD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1199: Symposium F –Multiferroic and Ferroelectric Materials , 2009 , 1199-F03-05
Copyright
Copyright © Materials Research Society 2010

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References

1 Spaldin, N.A. and Fiebig, M., Science 309, 391 (2005)Google Scholar
2 Eerenstein, W., Mathur, N. D., and Scott, J. F., Nature 442, 759 (2006)10.1038/nature05023Google Scholar
3 Gajek, M., Bibes, M., fusil, S., Bouzehoune, K., Fontcuberta, J., Barthélémy, A., and Fert, A., Nature Mater. 6, 296 (2007)Google Scholar
4 Barthélémy, A. and Bibes, M., Nature Mater. 7, 425 (2008)Google Scholar
5 Hill, N.A., J. Phys. Chem. B 104, 6694 (2000)Google Scholar
6 Ramesh, R., Spaldin, N.A., Nature Mater. 6, 21 (2007)Google Scholar
7 Scott, J.F. and Araujo, C.A.P.D, Science 246, 1400 (1989)Google Scholar
8 Park, J.H, Vescoso, E., Kim, H.J, Kwon, C., Ramesh, R. and Venkatesan, T., Nature 392, 794 (1998)Google Scholar
9 Haghiri-Gosnet, A-M and Renard, J-P J. Phys. D: Appl. Phys. 36, R127 (2003)Google Scholar
10 Vrejoiu, I., Ziese, M., Setzer, A., Esquinazi, P.D., Birajdar, B.I., Lotnyk, A., Alexe, M. and Hesse, D., Appl. Phy. Lett. 92, 152506 (2008)Google Scholar
11 Ma, Y. G., Cheng, W. N., Ning, M., and Ong, C. K., Appl. Phy. Lett. 90, 152911 (2007)Google Scholar
12 Wu, T., Zurbuchen, M. A., Saha, S., Wang, R.V., Streiffer, S. K. and Mitchelll, J. F., Phys. Rev. B 73, 134416 (2006)Google Scholar
13 Pang, G.K.H., Wong, K.H and Choy, C.L, Appl. Phy. Lett. 85, 1583 (2004)Google Scholar