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Fabrication and Characterization of 5 kV IGBTs on 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Charlotte Elizabeth Jonas ,
Qingchun Zhang ,
Sei-Hyung Ryu ,
Anant Agarwal  and
John Palmour
Charlotte Elizabeth Jonas
Affiliation:
[email protected], Cree, Inc., Power, 4600 Silicon Dr., Durham, NC, 27703, United States
Qingchun Zhang
Affiliation:
[email protected], Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
Sei-Hyung Ryu
Affiliation:
[email protected], Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
Anant Agarwal
Affiliation:
[email protected], Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
John Palmour
Affiliation:
[email protected], Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
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Abstract

P-channel planar IGBT devices were made on 4H-SiC. Punch-through buffer and drift layers were designed to block 5 kV were grown on 4H-SiC n-type substrate. Ion implantion was used for all selective doping such as n-well, p+, n+, JFET region and terminations. Gate oxidation was thermally grown and annealed. Blocking voltage of 5.7 kV was demonstrated. IGBTs exhibit VTH of -12 V, VT = -3.1 V, Rdiff,on = 400 mΩcm2 at Vg = -34 V at room temperature. Ron decreased to 108 mΩcm2 at Vg = -30 V at 300°C.

Keywords

devicesion-implantationoxidation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B10-05
Copyright
Copyright © Materials Research Society 2006

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References

1 Agarwal, Anant, Das, Mrinal, Krishnaswami, Sumithra, Palmour, John, Richmond, James, and Ryu, Sei-Hyung, “SiC Power Devices - An Overview,” Mat. Res. Soc. Symp. Proc. Vol. 815, pp. 243–254, (2004) Materials research Society Symposium, San Francisco, California, U. S. A., April 14-15, 2004.Google Scholar
2 Zhang, Q., Ryu, S., Jonas, C., Agarwal, A., and Palmour, J., “Simulations of 10kV Trench Gate IGBTs on 4H-SiC', Presented at ICSRM'05, September 2005, Pennsylvania, USA.Google Scholar
3 Das, M. K., “Recent Advances in (0001) 4H-SiC MOS Device Technology,” Materials Science Forum Vols. 457–460 (2004), pp. 1275–1280 Google Scholar
4 Das, M., Haney, S., S, Ryu, and Zhang, Q., “Improvement of Hole Channel Mobility in PIGBT on 4H-SiC” to be Presented at EMC'06, San Francisco, USA.Google Scholar