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F+ implants in crystalline Si: the Si interstitial contribution

Published online by Cambridge University Press:  01 February 2011

Pedro Lopez ,
Lourdes Pelaz ,
Ray Duffy ,
P. Meunier-Beillard ,
F. Roozeboom ,
K. van der Tak ,
P. Breimer ,
J. G. M. van Berkum ,
M. A. Verheijen  and
M. Kaiser
Pedro Lopez
Affiliation:
[email protected], Universidad de Valladolid, Electricidad y Electronica, E.T.S.I. Telecomunicacion. Campus Miguel Delibes s/n, Valladolid, 47011, Spain, +34 983 423683 ext. 5654, +34 983 423675
Lourdes Pelaz
Affiliation:
[email protected], Universidad de Valladolid, Electricidad y Electronica, E.T.S.I. Telecomunicacion. Campus Miguel Delibes s/n, Valladolid, 47011, Spain
Ray Duffy
Affiliation:
[email protected], NXP semiconductors, Leuven, 3001, Belgium
P. Meunier-Beillard
Affiliation:
[email protected], NXP semiconductors, Leuven, 3001, Belgium
F. Roozeboom
Affiliation:
[email protected], NXP semiconductors, Eindhoven, 5656, Netherlands
K. van der Tak
Affiliation:
[email protected], Philips Research Laboratories Eindhoven, Eindhoven, 5656, Netherlands
P. Breimer
Affiliation:
[email protected], Philips Research Laboratories Eindhoven, Eindhoven, 5656, Netherlands
J. G. M. van Berkum
Affiliation:
[email protected], Philips Research Laboratories Eindhoven, Eindhoven, 5656, Netherlands
M. A. Verheijen
Affiliation:
[email protected], Philips Research Laboratories Eindhoven, Eindhoven, 5656, Netherlands
M. Kaiser
Affiliation:
[email protected], Philips Research Laboratories Eindhoven, Eindhoven, 5656, Netherlands
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Abstract

In this work the Si interstitial contribution of F+ implants in crystalline Si is quantified by the analysis of extended defects and B diffusion in samples implanted with 25 keV F+ and/or 40 keV Si+. We estimate that approximately 0.4-0.5 Si interstitials are generated per implanted F+ ion, which is in good agreement with the value resulting from the net separation of Frenkel pairs obtained from MARLOWE simulations. The damage created by F+ implants in crystalline Si may explain the presence of extended defects in F-enriched samples and the evolution of B profiles during annealing. For short anneals, B diffusion is reduced when F+ is co-implanted with Si+ compared to the sample only implanted with Si+, due to the formation of more stable defects that set a lower Si interstitial supersaturation. For longer anneals, when defects have dissolved and TED is complete, B diffusion is higher because the additional damage created by the F+ implant has contributed to enhance B diffusion.

Keywords

Fdefectsdiffusion
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E06-07
Copyright
Copyright © Materials Research Society 2008

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References

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