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Extreme Sensitivity of Tc to Cool-Down Rate and Substrate Temperature for Epitaxial Fe-DOPED Ybco Films

Published online by Cambridge University Press:  26 February 2011

Frank Bridges ,
J. B. Boyce  and
R. I. Johnson
Frank Bridges
Affiliation:
Physics Department, University of California, Santa Cruz, CA 95064 Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. B. Boyce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. I. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Epitaxial Fe-substituted YBCO films on LaAIO3 substrates prepared by pulsed laser deposition exhibit a large variation in Tc with the substrate temperature and the cool-down rate of the films in an O2 environment, immediately after deposition. For 9% Fe films deposited at 700°C, a rapid cool-down yields a Tc of 60 K while a slow cool-down of 10°C/minute gives 18 K; Tc goes to 0 at 11% Fe for the slow cool-down films. For 9% Fe films deposited at 770°C, Tc > 80K and is much less sensitive to the cool-down rate or additional anneals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 143
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Tarascon, J. M., Barboux, P., Miceli, P. F., Greene, L. H., Hull, G. W., Eibschutz, M. and Sunshine, S. A., Phys. Rev. B 37, 7458 (1988).Google Scholar
2. Maeno, Y., Kato, M., Aoki, Y. and Fujita, T., Jpn. J. Appl. Phys. 26, L1982 (1987);Google Scholar
Maeno, Y., Tornita, T., Kyogoku, M., Awaji, S., Aoki, Y., Hoshino, K., Minami, A., and Fujita, T., Nature 328, 512(1987).Google Scholar
3. Lan, M. D., Liu, J. Z. and Shelton, R. N., Phys. Rev. B 43, 12, 989 (1991).Google Scholar
4. Takayama-Muromachi, E., Jpn. J. Appl. Phys. 26, L2087 (1987).Google Scholar
5. Ogale, S. B., Bendre, S. T., Guptasarma, P. and Multani, M., Solid State Commun. 78, 285 (1991).Google Scholar
6. Bridges, F., Truher, J., Fork, D. K., Boyce, J. B., Fenner, D. B., Connell, G. A. N., Geballe, T. H., Johnson, S., and Liu, L, Mat. Res. Symp. Proc. 191, 159 (1990).Google Scholar
7. Bridges, F., Boyce, J. B. and Johnson, R., Appl. Phys. Lett., to be published, June (1992).Google Scholar