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Extraction of Elastic Parameters of Heavily Boron-Doped Silicon Layer by Elimination of Misfit Dislocations

Published online by Cambridge University Press:  26 February 2011

HO-JUN Lee ,
Chul-Hi Han  and
Choong-Ki Kim
HO-JUN Lee
Affiliation:
also at Semiconductor R/D Laboratory of Hyundai Electronics Industries Co, Ltd, Ichon, Korea.
Chul-Hi Han
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea.
Choong-Ki Kim
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea.
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Abstract

In this paper, various elastic parameters of heavily boron-doped silicon layer have been extracted by eliminating the misfit dislocations in the layer. The dislocation-free silicon membranes doped with the boron concentration of 1.3 × 1020 atoms/cm3 have been fabricated and the Young’s modulus of 1.45 × 1012 dyn/cm2 and residual tensile stress of 2.7 × 109 dyn/cm2 have been extracted by blister method. From the Young’s modulus and residual stress, the residual tensile strain of 1.34 × 10−3, lattice constant of 5.424 Å, and misfit coefficient of 1.03 × 10−23 cm3/atom have been calculated. These parameters are very similar to those obtained from X-ray diffraction analysis and theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 129
Copyright
Copyright © Materials Research Society 1995

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References

1. Slotboom, J. W., Theunissen, M. J. J., and de Kock, A. J. R., IEEE Electron Devices Lett. 4, 403 (1983).Google Scholar
2. Rozgonyi, G. A. and Kola, R. R., in Defect Control in Semiconductors, edited by Sumino, K. (Elsevier Science Publishers B. V, North-Holland, 1990), p. 579.Google Scholar
3. Bassous, E. and Baran, E. F., J. Electrochem. Soc. 125, 1321 (1978).Google Scholar
4. See, e.g., Petersen, K. E., Shartel, A., and Raley, N., IEEE Trans. Electron Devices 29, 23 (1982).Google Scholar
5. Queisser, H. J., J. Appl. Phys. 32, 1776 (1961).Google Scholar
6. Lee, H. J., Jeon, Y. J., Han, C. H., and Kim, C. K., Appl. Phys. Lett. 64, 2955 (1994).Google Scholar
7. Schwuttke, C. H. and Queisser, H. J., J. Appl. Phys. 33, 1540 (1962).Google Scholar
8. Tabata, O., Kawahata, K., Sugiyama, S., and Igarashi, I., Micro Electro Mechanical Systems : An Investigation of Micro Structures. Sensors. Actuators. Mechanics, and Robots. IEEE, 152 (1989).Google Scholar
9. See, e.g., Properties of Silicon, edited by Ning, T. H. and Hilsum, C. (INSPEC, New York, 1988), p. 654.Google Scholar
10. Nix, W. R., Metall. Trans. A, 20A, 2217 (1989).Google Scholar
11. Fitzgerald, E. A., Materials Science Reports, 7, 87 (1991).Google Scholar
12. Washburn, J., Thomas, G., and Queisser, H. J., J. Appl. Phys. 35, 1909 (1964).Google Scholar
13. Prussin, S., J. Appl. Phys. 32, 1876 (1961).Google Scholar
14. Herzog, H.-J., Csepregi, L., and Seidel, H., J. Electrochem. Soc. 131, 2969 (1984).Google Scholar
15. Cullity, B. D., Elements of X-Ray Diffraction. 2nd ed. (Addison Wesley, London, 1978), p. 351.Google Scholar