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Extracting Trap Parameters From Picts Spectra In Cadmium Zinc Telluride Radiation Detector Material

Published online by Cambridge University Press:  10 February 2011

J. E. Toney ,
B. A. Brunett ,
T. E. Schlesinger  and
R. B. James
J. E. Toney
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
B. A. Brunett
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
T. E. Schlesinger
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
R. B. James
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
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Abstract

We demonstrate that the regularization method due to Weese can resolve closely-spaced peaks in PICTS spectra for cadmium zinc telluride. We also show that electron and hole traps can be distinguished from each other by the bias dependence of the spectrum when using an excitation source that is primarily infrared but which contains a small component of visible light. Lastly we show that there are qualitative differences between PICTS spectra taken with infrared excitation and those taken with visible excitation. We attribute the surface-related levels to diffusion into the detector material of gold from electroless deposition of contacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 109
Copyright
Copyright © Materials Research Society 1998

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References

1. Bube, R.N., Photoelectronic Properties of Semiconductors (Cambridge University Press, Cambridge, U.K., 1992).Google Scholar
2. Yoshie, O. and Kamihara, M., Jpn. J. Appl. Phys. 22, p. 629 (1983).Google Scholar
3. Balland, J.C., Zielinger, J.P., Tapiero, M., Gross, J.G. and Noguet, C., J. Phys. D: Appl. Phys. 19, p. 71 (1986).Google Scholar
4. Weese, J., Computer Phys. Commun. 69, p. 99 (1992).Google Scholar
5. Toney, J.E., Brunett, B.A., Schlesinger, T.E., Cross, E., Doty, F.P. and James, R.B., this proceedings.Google Scholar
6. Eiche, C., Fiederle, M., Weese, J., Maier, D., Ebling, D. and Benz, K.W., in Semiconductors for Room-Temperature Radiation Detector Applications, edited by James, R.B., Schlesinger, T.E., Siffert, P. and Franks, L. (Mater. Res. Soc. Proc. 302, Pittsburgh, PA, 1993) p. 231–6.Google Scholar
7. Martin, G.M. and Bois, G., in Semiconductor Characterization Techniques, Electrochem. Soc. Proc., vol. 78–3, p. 32 (1978).Google Scholar
8. Fiederle, M., Ebling, D., Eiche, C., Hofmann, D.M., Salk, M., Stadler, W., Benz, K.W., Meyer, B.K., J. Crystal Growth 138, p. 529 (1994).Google Scholar