Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-19T14:38:11.576Z Has data issue: false hasContentIssue false
  • English
  • Français

Extendibility Study of a PVD Cu Seed Process with Ar+ Rf-Plasma Enhanced Coverage for 45nm Interconnects

Published online by Cambridge University Press:  01 February 2011

Andrew H. Simon ,
Tibor Bolom ,
Teck Jung Tang ,
Brett Baker ,
Carsten Peters ,
Bryan Rhoads ,
Philip L. Flaitz ,
Sujatha Sankaran  and
Stephan Grunow
Andrew H. Simon
Affiliation:
[email protected], IBM Microelectronics, Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, NY, 12533, United States, (845) 892-2274, (845) 892-6578
Tibor Bolom
Affiliation:
[email protected], Advanced Micro Devices, Inc., Hopewell Junction, NY, 12533, United States
Teck Jung Tang
Affiliation:
[email protected], Chartered Semiconductor Mfg. Ltd., Hopewell Junction, NY, 12533, United States
Brett Baker
Affiliation:
[email protected], IBM T.J. Watson Research Center, Yorktown Heights, NY, 10598, United States
Carsten Peters
Affiliation:
[email protected], Advanced Micro Devices, Inc., Hopewell Junction, NY, 12533, United States
Bryan Rhoads
Affiliation:
[email protected], IBM Microelectronics, Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Philip L. Flaitz
Affiliation:
[email protected], IBM Microelectronics, Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Sujatha Sankaran
Affiliation:
[email protected], IBM Microelectronics, Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Stephan Grunow
Affiliation:
[email protected], IBM Microelectronics, Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Get access

Abstract

We present the results of a systematic benchmarking study, using 45nm-groundrule structures, of a commercially-available ionized PVD Cu technology which employs an in-situ Ar+ radio-frequency (Rf) plasma capability for enhanced coverage, and compare its performance and extendibility against the same seedlayer process operated in conventional low-pressure mode. Studies of single-damascene lines and dual-damascene via structures indicate that the PVD Cu seedlayer with Rf-Plasma enhancement enables a reduction of the PVD Cu seed thickness on the order of 35%, based on studies of Cu voiding, via-yield degradation, and transmission-electron microscopy (TEM). These results illustrate the critical importance of the Rf-plasma resputter capability in extending the PVD Cu process to advanced groundrules at 45nm and beyond.

Keywords

physical vapor deposition (PVD)sputteringCu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N03-04
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Edelstein, D., et al., Tech. Digest, Proc. IEEE Int'l Electron Devices Mtg. 1997, p. 773 Google Scholar
2. Simon, A.H.,, et al., Advanced Metallization Conf. 2004, p.545 Google Scholar
3. Klawuhn, E., et al., J. Vac. Sci. Tech, v.18, p. 46 (2000)Google Scholar
4. Thompson, J.H., et al., European Semicon. Design Production Assembly, v.23, p.97 (2001)Google Scholar
5. Simon, A.H., Uzoh, C.E., U.S. Patent # 5,933,753;Google Scholar
6. Simon, A.H., Uzoh, C.E., U.S. Patent # 6,768,203Google Scholar
7. Geffken, R.M., Luce, S.E., U.S. Patent # 5,985,762Google Scholar
8. Alers, G. B., et al., Proc. IEEE 41st Int'l Reliability Physics Symposium 2003, p. 151 Google Scholar
9. Yang, C.-C., et al., U.S. Patent # 6,784,105Google Scholar
10. Malhotra, S.G., Simon, A.H., U.S. Patent # 6,949,461Google Scholar
11. Yang, C.-C., et al., Proc. IEEE Int'l Interconnect Tech. Conf. 2005, p. 135 Google Scholar
12. Edelstein, D., et al., Proc. IEEE Int'l Interconnect Tech. Conf. 2001, p. 9 Google Scholar
13. Edelstein, D., et al., Advanced Metallization Conf. 2001, p.541 Google Scholar
14. Kumar, N.,, et al., Advanced Metallization Conf. 2004, p.247 Google Scholar