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Extendibility Study of a PVD Cu Seed Process with Ar+ Rf-Plasma Enhanced Coverage for 45nm Interconnects

Published online by Cambridge University Press:  01 February 2011

Andrew H. Simon ,
Tibor Bolom ,
Teck Jung Tang ,
Brett Baker ,
Carsten Peters ,
Bryan Rhoads ,
Philip L. Flaitz ,
Sujatha Sankaran  and
Stephan Grunow
Andrew H. Simon
Affiliation:
[email protected], IBM Microelectronics, Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, NY, 12533, United States, (845) 892-2274, (845) 892-6578
Tibor Bolom
Affiliation:
[email protected], Advanced Micro Devices, Inc., Hopewell Junction, NY, 12533, United States
Teck Jung Tang
Affiliation:
[email protected], Chartered Semiconductor Mfg. Ltd., Hopewell Junction, NY, 12533, United States
Brett Baker
Affiliation:
[email protected], IBM T.J. Watson Research Center, Yorktown Heights, NY, 10598, United States
Carsten Peters
Affiliation:
[email protected], Advanced Micro Devices, Inc., Hopewell Junction, NY, 12533, United States
Bryan Rhoads
Affiliation:
[email protected], IBM Microelectronics, Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Philip L. Flaitz
Affiliation:
[email protected], IBM Microelectronics, Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Sujatha Sankaran
Affiliation:
[email protected], IBM Microelectronics, Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Stephan Grunow
Affiliation:
[email protected], IBM Microelectronics, Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, NY, 12533, United States
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Abstract

We present the results of a systematic benchmarking study, using 45nm-groundrule structures, of a commercially-available ionized PVD Cu technology which employs an in-situ Ar+ radio-frequency (Rf) plasma capability for enhanced coverage, and compare its performance and extendibility against the same seedlayer process operated in conventional low-pressure mode. Studies of single-damascene lines and dual-damascene via structures indicate that the PVD Cu seedlayer with Rf-Plasma enhancement enables a reduction of the PVD Cu seed thickness on the order of 35%, based on studies of Cu voiding, via-yield degradation, and transmission-electron microscopy (TEM). These results illustrate the critical importance of the Rf-plasma resputter capability in extending the PVD Cu process to advanced groundrules at 45nm and beyond.

Keywords

physical vapor deposition (PVD)sputteringCu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N03-04
Copyright
Copyright © Materials Research Society 2008

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References

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