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Exposure Light Wavelength Effects on Charge Trapping and Detrapping of nc-MoOx Embedded ZrHfO High-k Stack

Published online by Cambridge University Press:  28 June 2013

Xi Liu ,
Yue Kuo  and
Tao Yuan
Xi Liu
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Department of Artie McFerrin Chemical Engineering, Texas A&M University, College Station, TX 77843-3122 Deptartment of Industrial and Systems Engineering, Ohio University, Athens, OH 45701
Yue Kuo
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Department of Artie McFerrin Chemical Engineering, Texas A&M University, College Station, TX 77843-3122
Tao Yuan
Affiliation:
Deptartment of Industrial and Systems Engineering, Ohio University, Athens, OH 45701
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Abstract

The influence of the red and green LED light exposure on the memory function of the nanocrystalline MoOx embedded ZrHfO high-k gate dielectric has been investigated. Since the performance of the device is mainly dependent on the hole trapping and detrapping mechanisms, the light exposure affects the hole generation, transfer, and storage to and in the dielectric structure. Both the charge storage capacity and the leakage current were increased from the light exposure. The Coulomb blockade phenomenon in the leakage current density vs. gate voltage curve disappears under the light exposure condition. The light exposure effect is potentially important for practical application of the device.

Keywords

dielectric propertieselectronic materialmemory
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1562: Symposium DD – Emerging Materials and Devices for Future Nonvolatile Memories , 2013 , mrss13-1562-dd10-05-cc06-05
Copyright
Copyright © Materials Research Society 2013 

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References

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