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Exploration of the Scaling Limits of 3D Integration

Published online by Cambridge University Press:  26 February 2011

Scott Pozder ,
Robert Jones ,
Vance Adams ,
Hui-Feng Li ,
Michael Canonico ,
Stefan Zollner ,
Sang Hwui Lee ,
Ronald J. Gutmann  and
Jian-Qiang Lu
Scott Pozder
Affiliation:
[email protected], Freescale Semiconductor Inc., Technology Solutions Organization, 3501 Ed Bluestein Blvd., MD: K10, Austin, TX, 78721, United States, 512 933 8923
Robert Jones
Affiliation:
[email protected], Freescale Semiconductor Inc., Austin, TX, 78721, United States
Vance Adams
Affiliation:
[email protected], Freescale Semiconductor Inc., Austin, TX, 78721, United States
Hui-Feng Li
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Troy, NY, 12180, United States
Michael Canonico
Affiliation:
[email protected], Freescale Semiconductor Inc., Austin, TX, 78721, United States
Stefan Zollner
Affiliation:
[email protected], Freescale Semiconductor Inc., Austin, TX, 78721, United States
Sang Hwui Lee
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Troy, NY, 12180, United States
Ronald J. Gutmann
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Troy, NY, 12180, United States
Jian-Qiang Lu
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Troy, NY, 12180, United States
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Abstract

Three dimensional (3D) wafer bonding is an emerging technology that may be used to increase transistor densities by stacking devices over devices. The alignment of the wafers and the devices on them is a function of the mechanical capability of the wafer to wafer alignment tool and the thermal conditions of each wafer when bonded. However, as bonded wafers are thinned to 1% or less of their starting thickness the processes of bonding and thinning as well as previous process history affect wafer planarity and silicon stress. The drive to vertically interconnect circuit blocks at the sub-micron scale requires a high density of vertical interconnects and thinning a wafer to less than 5 μm enables through wafer via processing at a scale found in the first layers of the interconnect stack. In this paper the measurement of wafer to wafer alignment was done by comparing a metal pattern on a face down bonded silicon on insulator (SOI) wafer to a complementary metal pattern on the bulk wafer to which it was bonded. The effect of aggressive thinning is evaluated using thinned back to face bonded SOI wafers with functional devices and face down bonded non-patterned SOI wafers thinned after bonding. The face up bonded SOI wafers with functional devices were temporarily bonded face down to a Si-wafer I, thinned to the buried oxide (BOX), face up bonded with benzocyclobutene (BCB) on a Si-wafer II, followed by release of the temporary bond and electrical test. Raman and XRD stress measurements of the non-patterned SOI wafer silicon 70 nm and 110 nm thick SOI Si were taken before and after thinning, and the radius of curvature of the SOI wafers and the bulk wafer substrates was monitored. Thermo-mechanical models of SOI Si stress and bonded wafer curvature are compared to the measured results.

Keywords

Sibondingdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 970: Symposium Y – Enabling Technologies for 3-D Integration , 2006 , 0970-Y02-01
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. International Technology Roadmap for Semiconductors (ITRS): 2003 Edition, (Semiconductor Industry Association, 2003).Google Scholar
2. Davis, J.A., Venkatesan, R., Kaloyeros, A., Beylansky, M., Souri, S.J., Banerjee, K., Saraswat, K.C., Rahman, A., Reif, R., and Meindl, J.D., Proc. IEEE, Vol. 89, No. 3, March 2001, pp. 305–324.Google Scholar
3. Lu, J.-Q., Lee, K.W., Kwon, Y., Rajagopalan, G., McMahon, J., Altemus, B., Gupta, M., Eisenbraun, E., Xu, B., Jindal, A., Kraft, R.P., McDonald, J.F., Castracane, J., Cale, T.S., Kaloyeros, A.E., and Gutmann, R.J., in Advanced Metallization Conference 2002 (AMC 2002), edited by Melnick, B.M., Cale, T.S., Zaima, S., and Ohta, T., Vol. V18 MRS, 2003, pp. 45–51.Google Scholar
4. Guarini, K.W., Topol, A.W., Ieong, M., Yu, R., Shi, L., Newport, M.R., Frank, D.J., Singh, D.V., Cohen, G.M., Nitta, S.V., Boyd, D.C., O'Neil, P.A., Tempest, S.L., Pogge, H.B., Purushothaman, S., and Haensch, W.E., in Digest of International Electron Device Meeting (IEDM) 2002, December 2002, pp. 943–945.Google Scholar
5. Kwon, Y., Jindal, A., McMahon, J.J., Lu, J.-Q., Gutmann, R.J., and Cale, T.S., in Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, Eds.: McKerrow, A.J., Leu, J., Kraft, O., , T.K., MRS Proc. Vol. 766, 2003, pp. E5.8.1–E5.8.6.Google Scholar
6. Gutmann, R.J., Lu, J.-Q., Pozder, S., Kwon, Y., Jindal, A., Celik, M., McMahon, J.J., Yu, K. and Cale, T.S., in AMC 2003, in press.Google Scholar
7. Souri, S.J. and Saraswat, K.C., in IEEE International Interconnect Technology Conference (IITC) 1999, May 1999, pp. 24–26.Google Scholar
8. Rahman, A., Fan, A., Chung, J., and Reif, R., in IITC 1999, pp. 233–235.Google Scholar
9. Lee, K.W., Nakamura, T., One, T., Yamada, Y., Mizukusa, T., Hasi-moto, H., Park, K.T., Kurino, H., Koyanagi, M., in IEDM 2000, pp. 165–168.Google Scholar
10. Huebner, H., Eigner, M., Gruber, W., Klumpp, A., Merkel, R., Ramm, P., Roth, M., Weber, J., Wieland, R., in AMC 2002, pp. 53–58.Google Scholar
11. Burns, J., McIlrath, L., Keast, C., Lewis, C., Loomis, A., Warner, K., Wyatt, P., in 2001 IEEE International Solid-State Circuits Conference, (ISSCC 2001), February 2001, p. 268.Google Scholar
12. Markunas, R., Semiconductor International, Vol. 25, No. 13, November 2002, p. 63.Google Scholar
13. Lu, J.-Q., Kwon, Y., McMahon, J.J., Jindal, A., Altemus, B., Cheng, D., Eisenbraun, E., Cale, T.S., and Gutmann, R.J., in Proceedings of 20th International VLSI Multilevel interconnection Conference (VMIC 2003), September 2003, pp. 227–236.Google Scholar
14. List, S., Webb, C., Kim, S., in AMC 2002, pp. 29–36.Google Scholar
15. Lu, J.-Q., Jindal, A., Kwon, Y., McMahon, J.J., Rasco, M., Augur, R., Cale, T.S., and Gutmann, R.J., in IITC 2003, pp. 74–76.Google Scholar
16. Kalyanasundharam, J., Iverson, R.B., Thompson, E.T., Prasad, V., Cale, T.S., Gutmann, R.J., and Coz, Y.L. Le, in AMC 2002, pp.59–65.Google Scholar
17. BCB Technical Data Sheets, Dow Chemical Company, http://www.dow.com/cyclotene/ Google Scholar
18. Morrow, P., Kpbrinsky, M. J., Ramanathan, S. R., Park, C.M., Harmes, M., Ramachandrarao, V., Park, H., Lloster, G., List, S., Kim, S., in AMC 2004, pp 125–130, 2005 Google Scholar
19. Smith, C. S., Phys. Rev., 94, p. 42, 1954 Google Scholar
20. Tekleab, D., Adams, V., Loiko, K., Winstead, B., Parsons, S. and Foisy, M., Proceedings of International Conference on Simulation of Semiconductor Process and Devices (SISPAD 2006), September 2006, pp. 119–122.Google Scholar
21. Pozder, S. et al., IITC, p.103, 2004 Google Scholar
22. Liu, R. Liu, R. and Canonico, M., in Characterization and Metrology for ULSI Technology, edited by Seiler, D.G. et al., AIP Conference Proceedings 683, Melville, New York, 2003, pp. 738–743.Google Scholar
23. Bowen, D. K. and Tanner, B. K., High Resolution X-ray Diffractometry and Topography, Taylor & Francis, London, 1998.Google Scholar
24. Cohen, G.M., Mooney, P.M., Park, H., Cabral, C., and Jones, E.C., J. Appl. Phys. 93, 245 (2003).Google Scholar