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Experimental Studies and Thermodynamic Modeling of the Interaction of O2 with SiC

Published online by Cambridge University Press:  11 February 2011

Y. Song  and
F. W. Smith
Y. Song
Affiliation:
Department of Physics, The City College of the City University of New York, New York, NY 10031, U.S.A.
F. W. Smith
Affiliation:
Department of Physics, The City College of the City University of New York, New York, NY 10031, U.S.A.
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Abstract

We report on experimental studies and thermodynamic modeling of the reaction of O2 with the 4H- and 6H-SiC surfaces at high temperatures. This reaction leads to the growth of passivating SiO2 layers at high O2 pressures, etching of the surfaces at lower pressures, and enhancements of the surface segregation of carbon at still lower pressures. A pressure-temperature phase diagram for the oxidation of SiC is presented. Evidence for the thermal decomposition of the SiO2 layer on SiC is also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K4.4
Copyright
Copyright © Materials Research Society 2003

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References

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