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Experimental Results and Modeling of the Codiffusion of Donors and Acceptors in Si

Published online by Cambridge University Press:  15 February 2011

S. Solmi  and
S. Valmorri
S. Solmi
Affiliation:
CNR-LAMEL Institute, Via Gobetti, 101- 40129, Bologna, Italy..
S. Valmorri
Affiliation:
CNR-LAMEL Institute, Via Gobetti, 101- 40129, Bologna, Italy..
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Abstract

A model based on ion pairing for the simulation of donor and acceptor codiffusion in silicon is presented. The proposed model allows us to obtain a good agreement with the experimental profiles over a wide range of diffusion conditions, specially at high concentrations where the standard process simulator codes give results strongly inaccurate. Comparison of the simulations with new and literature codiffusion profiles is provided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 65
Copyright
Copyright © Materials Research Society 1995

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References

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