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Experimental Evidence of Long-Range Point Defect-Phosphorous Pair Diffusion in Silicon

Published online by Cambridge University Press:  31 January 2011

Ammar Nayfeh
Affiliation:
[email protected], Innovative Silicon, Santa Clara, California, United States
Viktor Koldyaev
Affiliation:
[email protected], Innovative Silicon, Santa Clara, California, United States
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Abstract

Point Defect (PD) mediated diffusion of phosphorous in silicon is studied in order to address the long standing open problem of PD-Dopant pair lifetime. A novel experimental method is suggested to increase PD-P pair lifetime for better observability and experimental resolution. In the experiment, phosphorous is implanted, followed by low temperature poly-Si deposition with in-situ doped phosphorous. The P profile shows, after low temperature (<650°C) in-situ phosphorous doped poly-Si deposition, an exponential dependence of two orders of magnitude for a significant depth scale. This indicates that the PD-P pairs survive long-range diffusion before dissociating in the Si lattice. As a result, the lifetime of PD-P pair was extracted and this provides a physical basis for TCAD simulation at the atomic scale.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

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