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Experimental Evaluation of a-Se Flat-Panel X-ray Detector for Digital Radiography

Published online by Cambridge University Press:  01 February 2011

Jang-Yong Choi ,
Ji-Koon Park ,
Dong-Gil Lee ,
Sang-Sik Kang  and
Sang-Hee Nam
Jang-Yong Choi
Affiliation:
Department of Biomedical Engineering, College of Biomedical Science and Engineering Inje University, Kimhae, Kyungnam, 621-749, Korea Medical Imaging Research Center
Ji-Koon Park
Affiliation:
Department of Biomedical Engineering, College of Biomedical Science and Engineering Inje University, Kimhae, Kyungnam, 621-749, Korea Medical Imaging Research Center
Dong-Gil Lee
Affiliation:
Department of Biomedical Engineering, College of Biomedical Science and Engineering Inje University, Kimhae, Kyungnam, 621-749, Korea Medical Imaging Research Center
Sang-Sik Kang
Affiliation:
Department of Biomedical Engineering, College of Biomedical Science and Engineering Inje University, Kimhae, Kyungnam, 621-749, Korea Medical Imaging Research Center
Sang-Hee Nam
Affiliation:
Inje University, Kimhae, Kyungnam, 621-749, Korea
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Abstract

Nowadays, large area, flat panel solid state detectors are being investigated for digital radiography. In this paper, development and evaluation of a selenium-based flat-panel digital xray detector are described. The prototype detector has a pixel pitch of 139μm and a total active imaging area of 7″×8.5″, giving a total of 1.9 million pixel. This detector include a x-ray imaging layer of amorphous selenium as a photoconductor which is evaporated in vacuum state on a TFT flat panel, to make signals in proportion to incident x-ray. The film thickness was about 500μm. To evaluate the imaging performance of the digital radiography (DR) system developed in our group, sensitivity, linearity of the response of exposure, the modulation transfer function(MTF) and detective quantum efficiency(DQE) of detector was measured. The measured sensitivity was 4.16×106 ehp/pixel mR at the bias field of 10 V/μm: The beam condition was 41.9 KeV. Measured MTF at 2.5 lp/mm was 52%, and the DQE at 1.5 lp/mm was 75%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.54
Copyright
Copyright © Materials Research Society 2003

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