Hostname: page-component-f554764f5-nwwvg Total loading time: 0 Render date: 2025-04-12T05:07:28.177Z Has data issue: false hasContentIssue false
  • English
  • Français

Experimental and Theoretical Analysis of Strain Relaxation in GexSi1-x/Si(100) Heteroepitaxy

Published online by Cambridge University Press:  25 February 2011

R. Hull  and
J.C. Bean
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Get access

Abstract

By analyzing in-situ strain relaxation measurements of GexSi1-x/Si(100) epitaxy in a Transmission Electron Microscope, we are able to quantify the fundamental parameters which describe strain energy relaxation via misfit dislocation introduction. Quantitative descriptions of misfit dislocation nucleation, propagation and interaction processes are derived. The numerical parameters obtained from these experiments are then incorporated into a predictive theoretical model of strain relaxation whichrelies only upon experimentally measured quantities. Good agreement between experiment and theory is obtained over a wide range of data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 309
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

(1) Merwe, J.H. Van der and Ball, C.A.B. in Epitaxial Growth, Part b, edited by Matthews, J.W. (Academic, New York, 1975), pp. 493–528 Google Scholar
(2) Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974); 32, 265 (1974)Google Scholar
(3) People, R. and Bean, J.C., Appl. Phys. Lett. 47, 332 (1985)Google Scholar
(4) Dodson, B.W. and Tsao, J.Y., Appl. Phys. Lett. 51, 1325 (1987)Google Scholar
(5) Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S. and Robinson, I.K., J. Vac. Sci. Technol. A2, 436 (1984)Google Scholar
(6) Kasper, E., Herzog, H.J. and Kibbel, H., Apl. Phys. 8, 199 (1975)CrossRefGoogle Scholar
(7) Fritz, I.J., Appl. Phys. Lett. 51, 1080 (1987)Google Scholar
(8) Hull, R., Fiory, A.T., Bean, J.C., Gibson, J.M., Scott, L., Benton, J.L. and Nakahara, S. in Proc. 13th Int. Conf. on Defects in Semiconductors, ed. Kimmerling, L.C. and Parsey, J.M. Jr, (The Metallurgical Society of AIME, Warrendale, Pennsylvania, 1985), p. 505.Google Scholar
(9) Fiory, A.T., Bean, J.C., Hull, R. and Nakahara, S.. Phys. Rev. B31, 4063 (1985)Google Scholar
(10) Bean, J.C., Mat. Res. Soc. Proc. 37, ed. Gibson, J.M. and Dawson, L.R. (Materials Research Society, Pittsburgh, PA, 1985), p.245 Google Scholar
(11) Gatan, 780 Commonwealth Drive, Warrendale, PA 15086; model # 628Google Scholar
(12) Hull, R., Bean, J.C., Werder, D.J. and Leibenguth, R.E., Appl. Phys. Lett. 52, 1605 (1988)Google Scholar
(13) Hull, R. and Bean, J.C., Appl. Phys. Lett. 54, 925 (1989)Google Scholar
(14) R. Hull, Bean, J.C., Werder, D.J. and Leibenguth, R.E., to be published in Phys. Rev. B, July 1989.Google Scholar
(15) Hull, R. and Bean, J.C., to be published in J. Vac. Sci. Tech. A, Jul/Aug 1989 Google Scholar
(16) Hull, R., Bean, J.C., Koch, S.M. and Harris, J.S. Jr, in “Dislocations and Interfaces in Semiconductors”, ed. Rajan, K., Narayan, J. and Ast, D. (The Metallurgical Society, Warrendale, PA 1988), p. 77 Google Scholar
(17) Alexander, H. and Haasen, P. in Solid State Physics (Academic, New York, 1968), Vol. 22 Google Scholar
(18) Patel, J.R. and Chaudhuri, A.R., Phys. Rev. 143 (601), 1966 Google Scholar
(19) Dodson, B.W., Phys. Rev. B38, 12383 (1988)Google Scholar
(20) Eaglesham, D.J., Kvam, E.P., Maher, D.M., Humphreys, C.J. and Bean, J.C., to be published in Phil. Mag.Google Scholar
(21) See paper by Eaglesham, D.J. et al in these proceedings.Google Scholar
(22) Hull, R. and Bean, J.C., submitted to J. Appl. Phys.Google Scholar
(23) Hagen, W. and Strunk, H., Appl. Phys. 17, 85 (1978)Google Scholar