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Experimental Analysis of the Process of Anodic Bonding using an Evaporated Glass Layer

Published online by Cambridge University Press:  15 February 2011

W. B. Choi
Affiliation:
Div. Electronics and Information Technology, KIST, P.O.Box 131, Cheongryang, 130–650, Seoul, Korea, [email protected]
B. K. Ju
Affiliation:
Div. Electronics and Information Technology, KIST, P.O.Box 131, Cheongryang, 130–650, Seoul, Korea, [email protected]
Y. H. Lee
Affiliation:
Div. Electronics and Information Technology, KIST, P.O.Box 131, Cheongryang, 130–650, Seoul, Korea, [email protected]
M. R. Haskard
Affiliation:
Microelectronics Centre, Univ. of South Australia, S.A., 5098, Australia
S. J. Jeong
Affiliation:
Information Display Research Institute, Orion Electric Co.
N. Y. Lee
Affiliation:
Information Display Research Institute, Orion Electric Co.
M. Y. Sung
Affiliation:
Department of Electrical Engineering, Korea Univ., Seoul, Korea
M. H. Oh
Affiliation:
Div. Electronics and Information Technology, KIST, P.O.Box 131, Cheongryang, 130–650, Seoul, Korea, [email protected]
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Abstract

A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Corning #7740 Pyrex glass was used the source material of electron evaporation. From Auger electron spectroscopy (AES), the composition of the deposited glass layer is nearly same as that of the bulk Pyrex glass plate. Wafers are bonded at a temperature as low as 135 °C with an applied voltage as small as 35Vdc, enabling of this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μ m thick is suitable for anodic bonding. Finally, The role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy (SIMS) analysis.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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