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Exciton Dissociation and Mobility in Conducting Polymers and Oligomers

Published online by Cambridge University Press:  10 February 2011

S. C. Jain ,
W. Geens ,
J. Poortmans ,
A. Mehra ,
J. Nijs  and
R. Mertens
S. C. Jain
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
W. Geens
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
J. Poortmans
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
A. Mehra
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
J. Nijs
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
R. Mertens
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Abstract

A survey of the literature shows that reverse bias current IL of an illuminated conducting polymer Schottky diode increases with voltage. We suggest that this increase in IL with applied reverse bias is due to a combination of two factors: (1) increase of mobility, and (2) dissociation of excitons. The experimental results agree with the values of IL calculated using either of the two mechanisms. Therefore it is difficult to determine the relative importance of the two mechanisms. The relative importance can be determined only if reliable values of material parameters are available. We have fabricated Schottky diodes and FETs using 5-ring n-octyloxy-substituted oligo[p-phenylene vinylene](Ooct-OPV5) and C60. The mobility of the oligomer derived from the measured characteristics of the diode is 3.29×10−7cm2/Vs and from the FET data, 3.24 × 10−4 cm2/Vs. These results show that the mobility (and other material parameters) depend strongly on the structure of the device. Therefore for interpreting the IL data it is important to measure the material parameters on the same structure on which IL measurements are made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 485
Copyright
Copyright © Materials Research Society 2000

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References

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