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Excitation-Wavelength Dependent and Time-Resolved Photoluminescence Studies of Europium Doped GaN Grown by Interrupted Growth Epitaxy (IGE)

Published online by Cambridge University Press:  01 February 2011

Ei Ei Nyein ,
Uwe Hömmerich ,
Chanaka Munasinghe ,
Andrew J. Steckl  and
John M. Zavada
Ei Ei Nyein
Affiliation:
Department of Physics, Hampton University, Hampton, VA 23668
Uwe Hömmerich
Affiliation:
Department of Physics, Hampton University, Hampton, VA 23668
Chanaka Munasinghe
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, OH 45221
John M. Zavada
Affiliation:
U.S. Army Research Office, Research Triangle Park, NC 27709
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Abstract

The emission properties of Eu doped GaN thin films prepared by interrupted growth epitaxy (IGE) were investigated through excitation-wavelength dependent and time-resolved photoluminescence (PL) studies. Under above-gap excitation (333-363 nm) large differences were observed in the Eu3+ PL intensity and spectral features as a function of Ga shutter cycling time. The overall strongest red Eu3+ PL intensity was obtained from a sample grown with a Gashutter cycling time of 20 minutes. The main Eu3+ emission line originating from 5D0→ 7F2 transition was composed of two peaks located at 620 nm and 622 nm, which varied in relative intensity depending on the growth conditions. The room-temperature emission lifetimes of the samples were non-exponential and varied from ∼50 νs to ∼200 νs (1/e lifetimes). Under resonant excitation at 471 nm (7F0→5D2) all samples exhibited nearly identical PL spectra independent of Ga shutter cycling time. Moreover, the Eu3+ PL intensities and lifetimes varied significantly less compared to above-gap excitation. The excitation wavelengths dependent PL results indicate the existence of different Eu3+ centers in GaN: Eu, which can be controlled by the Ga shutter cycling time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V3.5
Copyright
Copyright © Materials Research Society 2005

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Footnotes

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E-mail: [email protected]

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