Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T15:38:25.648Z Has data issue: false hasContentIssue false
  • English
  • Français

Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon

Published online by Cambridge University Press:  15 February 2011

Tomoyoshi Motohiro ,
Tetsu Kachi ,
Fusayoshi Miura ,
Yasuhiko Takeda ,
Shi-Aki Hyodo  and
Shoji Noda
Tomoyoshi Motohiro
Affiliation:
Toyota Central R&D Labs., Inc., 41-1, Nagakute-cho, Aichi-gun, Aichl-ken, 480-11, Japan
Tetsu Kachi
Affiliation:
Toyota Central R&D Labs., Inc., 41-1, Nagakute-cho, Aichi-gun, Aichl-ken, 480-11, Japan
Fusayoshi Miura
Affiliation:
Toyota Central R&D Labs., Inc., 41-1, Nagakute-cho, Aichi-gun, Aichl-ken, 480-11, Japan
Yasuhiko Takeda
Affiliation:
Toyota Central R&D Labs., Inc., 41-1, Nagakute-cho, Aichi-gun, Aichl-ken, 480-11, Japan
Shi-Aki Hyodo
Affiliation:
Toyota Central R&D Labs., Inc., 41-1, Nagakute-cho, Aichi-gun, Aichl-ken, 480-11, Japan
Shoji Noda
Affiliation:
Toyota Central R&D Labs., Inc., 41-1, Nagakute-cho, Aichi-gun, Aichl-ken, 480-11, Japan
Get access

Abstract

Porous silicon samples photoluminous in orange, pink or greenish-yellow were formed by anodization. The shapes and wave length positions of their photoluminescence peaks were not influenced by the excitation wavelength. The photoluminescence intensity at any wavelength between 520nm and 800nm varied as a function of the excitation wavelength In accordance with the imaginary part of the spectral refractive index of bulk silicon. Thus the excitation process responsible for the visible photoluminescence of porous silicon seems to be bulk-silicon-like.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 53
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Canham, L.T., Appl. Phys. Lett. 57,1046(1990).CrossRefGoogle Scholar
2. Canham, L.T., Houlton, M.R., Leong, W.Y., Pickering, C., and Keen, J.M., J. Appl. Phys. 70,422(1991).CrossRefGoogle Scholar
3. Searson, P.C., Appl. Phys. Lett. 59,832(1991).Google Scholar
4. Halimaoui, A., Oules, C., Bomchil, G., Bsiesy, A., Gaspard, F., Herino, R., Ligeon, M., and Muller, F., Appl.Phys.Lett. 59,304(1991).Google Scholar
5. Lehmann, V. and Gosele, U., Appl. Phys. Lett. 58,856(1991).Google Scholar
6. Cullis, A.G. and Canham, L.T., NATURE 353,335(1991).Google Scholar
7. Koshida, N. and Koyama, H., Jap. J. Appl. Phys. 30,L1221(1991).Google Scholar
8. Discussion in the “Semiconductor A (silicon) session in the 52th Autum Meeting of the Japan Society of Applied Physics, Okayama,Japan.September 9–10th,1991.Google Scholar
9. Stewart, J.J.P., MOPAC, A Semi-Empirical Molecular Orbital Program, QCPE, 455(1983).Google Scholar
10. Smith, R.L., Cuang, S.-F., Collins, S.D., J. Electronic Materials, 17, 533(1988).CrossRefGoogle Scholar